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MBM29F040C-90 参数 Datasheet PDF下载

MBM29F040C-90图片预览
型号: MBM29F040C-90
PDF下载: 下载PDF文件 查看货源
内容描述: 闪存4M ( 512K ×8 )位 [FLASH MEMORY 4M (512K x 8) BIT]
分类和应用: 闪存
文件页数/大小: 41 页 / 423 K
品牌: SPANSION [ SPANSION ]
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MBM29F040C-55/-70/-90  
DQ2  
Toggle Bit II  
This Toggle Bit II, along with DQ6, can be used to determine whether the devices are in the Embedded Erase  
Algorithm or in Erase Suspend.  
Successive reads from the erasing sector will cause DQ2 to toggle during the Embedded Erase Algorithm. If the  
devices are in the erase-suspended-read mode, successive reads from the erase-suspended sector will cause  
DQ2 to toggle. When the devices are in the erase-suspended-program mode, successive reads from the byte  
address of the non-erase suspended sector will indicate a logic “1” at the DQ2 bit.  
DQ6 is different from DQ2 in that DQ6 toggles only when the standard program or Erase, or Erase Suspend  
Program operation is in progress. The behavior of these two status bits, along with that of DQ7, is summarized  
as follows:  
Mode  
DQ7  
DQ7  
0
DQ6  
DQ2  
1
Program  
Erase  
toggles  
toggles  
toggles  
Erase Suspend Read  
(Erase-Suspended Sector)  
(Note 1)  
1
1
toggles  
Erase Suspend Program  
DQ7 (Note 2)  
toggles  
1 (Note 2)  
Notes:1. These status flags apply when outputs are read from a sector that has been erase-suspended.  
2. These status flags apply when outputs are read from the byte address of the non-erase suspended sector.  
Data Protection  
TheMBM29F040Cisdesignedtoofferprotectionagainstaccidentalerasureorprogrammingcausedbyspurious  
system level signals that may exist during power transitions. During power up the device automatically resets  
the internal state machine in the Read mode. Also, with its control register architecture, alteration of the memory  
contents only occurs after successful completion of specific multi-bus cycle command sequences.  
The device also incorporates several features to prevent inadvertent write cycles resulting form VCC power-up  
and power-down transitions or system noise.  
Low VCC Write Inhibit  
To avoid initiation of a write cycle during VCC power-up and power-down, a write cycle is locked out for VCC less  
than 3.2 V (typically 3.7 V). If VCC < VLKO, the command register is disabled and all internal program/erase circuits  
are disabled. Under this condition the device will reset to the read mode. Subsequent writes will be ignored  
until the VCC level is greater than VLKO.  
Write Pulse “Glitch” Protection  
Noise pulses of less than 5 ns (typical) on OE, CE, or WE will not initiate a write cycle.  
Logical Inhibit  
Writing is inhibited by holding any one of OE = VIL, CE = VIH, or WE = VIH. To initiate a write cycle CE and WE  
must be a logical zero while OE is a logical one.  
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