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MBM29DL324TE90TN 参数 Datasheet PDF下载

MBM29DL324TE90TN图片预览
型号: MBM29DL324TE90TN
PDF下载: 下载PDF文件 查看货源
内容描述: FLASH存储器CMOS 32米(4 MX 8/2 MX 16 )位双操作 [FLASH MEMORY CMOS 32 M (4 M X 8/2 M X 16) BIT Dual Operation]
分类和应用: 存储
文件页数/大小: 84 页 / 1272 K
品牌: SPANSION [ SPANSION ]
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MBM29DL32XTE/BE80/90  
Data Polling  
3rd Bus Cycle  
555h  
Address  
PA  
PA  
tWC  
tRC  
tAS  
tAH  
CE  
tCH  
tCS  
tCE  
OE  
tWP  
tWPH  
tOE  
tGHWL  
tWHWH1  
WE  
tOH  
tDF  
tDS  
tDH  
A0h  
PD  
DQ7  
DOUT  
DOUT  
Data  
Notes : PA is address of the memory location to be programmed.  
PD is data to be programmed at byte address.  
DQ7 is the output of the complement of the data written to the device.  
DOUT is the output of the data written to the device.  
Figure indicates last two bus cycles out of four bus cycle sequence.  
These waveforms are for the ×16 mode. (The addresses differ from ×8 mode.)  
Alternate WE Controlled Program Operation Timing Diagram  
59  
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