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MBM29DL161TE-70TN 参数 Datasheet PDF下载

MBM29DL161TE-70TN图片预览
型号: MBM29DL161TE-70TN
PDF下载: 下载PDF文件 查看货源
内容描述: 闪存的CMOS 16M ( 2M ×8 / 1M ×16 )位双操作 [FLASH MEMORY CMOS 16M (2M X 8/1M X 16) BIT Dual Operation]
分类和应用: 闪存存储内存集成电路光电二极管
文件页数/大小: 76 页 / 1048 K
品牌: SPANSION [ SPANSION ]
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MBM29DL16XTE/BE70/90  
operation. If it is still toggling, the device did not complete the operation successfully, and the system must write  
the reset command to return to reading array data.  
The remaining scenario is that the system initially determines that the toggle bit is toggling and DQ5 has not  
gone high. The system may continue to monitor the toggle bit and DQ5 through successive read cycles,  
determining the status as described in the previous paragraph. Alternatively, it may choose to perform other  
system tasks. In this case, the system must start at the begining of the algorithm when it returns to determine  
the status of the operation. (Refer to “(4) Toggle Bit Algorithm” in FLOW CHART.)  
Toggle Bit Status Table  
Mode  
DQ7  
DQ7  
0
DQ6  
DQ2  
1
Program  
Erase  
Toggle  
Toggle  
Toggle*1  
Erase-Suspend Read  
(Erase-Suspended Sector)  
1
1
Toggle  
1*2  
Erase-Suspend Program  
DQ7  
Toggle  
*1 : Successive reads from the erasing or erase-suspend sector cause DQ2 to toggle.  
*2 : Reading from the non-erase suspend sector address indicates logic “1” at the DQ2 bit.  
• RY/BY  
Ready/Busy  
The MBM29DL16XTE/BE provide a RY/BY open-drain output pin as a way to indicate to the host system that  
the Embedded Algorithms are either in progress or has been completed. If the output is low, the devices are  
busy with either a program or erase operation. If the output is high, the devices are ready to accept any read/  
write or erase operation. When the RY/BY pin is low, the devices will not accept any additional program or erase  
commands. If the MBM29DL16XTE/BE are placed in an Erase Suspend mode, the RY/BY output will be high.  
During programming, the RY/BY pin is driven low after the rising edge of the fourth write pulse. During an erase  
operation, the RY/BY pin is driven low after the rising edge of the sixth write pulse. The RY/BY pin will indicate  
a busy condition during the RESET pulse. Refer to “(10) RY/BY Timing Diagram during Program/Erase  
Operations” and “(11) RESET, RY/BY Timing Diagram” in TIMING DIAGRAM for a detailed timing diagram.  
The RY/BY pin is pulled high in standby mode.  
Since this is an open-drain output, the pull-up resistor needs to be connected to VCC ; multiples of devices may  
be connected to the host system via more than one RY/BY pin in parallel.  
• Data Protection  
The MBM29DL16XTE/BE are designed to offer protection against accidental erasure or programming caused  
by spurious system level signals that may exist during power transitions. During power up the devices  
automatically reset the internal state machine in the Read mode. Also, with its control register architecture,  
alteration of the memory contents only occurs after successful completion of specific multi-bus cycle command  
sequences.  
The devices also incorporate several features to prevent inadvertent write cycles resulting form VCC power-up  
and power-down transitions or system noise.  
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