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MBM29DL161TE-70TN 参数 Datasheet PDF下载

MBM29DL161TE-70TN图片预览
型号: MBM29DL161TE-70TN
PDF下载: 下载PDF文件 查看货源
内容描述: 闪存的CMOS 16M ( 2M ×8 / 1M ×16 )位双操作 [FLASH MEMORY CMOS 16M (2M X 8/1M X 16) BIT Dual Operation]
分类和应用: 闪存存储内存集成电路光电二极管
文件页数/大小: 76 页 / 1048 K
品牌: SPANSION [ SPANSION ]
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MBM29DL16XTE/BE70/90  
(MBM29DL164TE = 33h and MBM29DL164BE = 35h for ×8 mode; MBM29DL164TE = 2233h and  
MBM29DL164BE = 2235h for ×16 mode). These two bytes/words are given in “MBM29DL16XTE/BE Sector  
Group Protection Verify Autoselect Codes Tables” and “Expanded Autoselect Code Tables” in DEVICE BUS  
OPERATION. All identifiers for manufactures and device will exhibit odd parity with DQ7 defined as the parity  
bit. In order to read the proper device codes when executing the autoselect, A1 must be VIL. (See  
“MBM29DL16XTE/BESectorGroupProtectionVerifyAutoselectCodesTablesandExpandedAutoselectCode  
Tables” in DEVICE BUS OPERATION.)  
In case of applying VID on A9, since both Bank 1 and Bank 2 enter Autoselect mode, the simultenous operation  
cannot be executed.  
• Write  
Device erasure and programming are accomplished via the command register. The contents of the register serve  
as inputs to the internal state machine. The state machine outputs dictate the function of the device.  
The command register itself does not occupy any addressable memory location. The register is a latch used to  
store the commands, along with the address and data information needed to execute the command. The  
command register is written by bringing WE to VIL, while CE is at VIL and OE is at VIH. Addresses are latched on  
the falling edge of WE or CE, whichever happens later; while data is latched on the rising edge of WE or CE,  
whichever happens first. Standard microprocessor write timings are used.  
Refer to “AC Characteristics” in ELECTRICAL CHARACTERISTICS and TIMING DIAGRAM.  
• Sector Group Protection  
The MBM29DL16XTE/BE feature hardware sector group protection. This feature will disable both program and  
erase operations in any combination of 17 sector groups of memory. (See “Sector Group Addresses Tables  
(MBM29DL16XTE/BE)” in FLEXIBLE SECTOR-ERASE ARCHITECTURE). The sector group protection  
feature is enabled using programming equipment at the user’s site. The device is shipped with all sector groups  
unprotected.  
To activate this mode, the programming equipment must force VID on address pin A9 and control pin OE, (suggest  
VID = 11.5 V), CE = VIL and A0 = A6 = VIL, A1 = VIH. The sector group addresses (A19, A18, A17, A16, A15, A14, A13,  
and A12) should be set to the sector to be protected. “Sector Address Tables (MBM29DL161TE/BE,  
MBM29DL162TE/BE, MBM29DL163TE/BE, MBM29DL164TE/BE)” in FLEXIBLE SECTOR-ERASE  
ARCHITECTURE define the sector address for each of the thirty nine (39) individual sectors, and “Sector Group  
Addresses Tables (MBM29DL16XTE/BE)” in FLEXIBLE SECTOR-ERASE ARCHITECTURE define the sector  
group address for each of the seventeen (17) individual group sectors. Programming of the protection circuitry  
begins on the falling edge of the WE pulse and is terminated with the rising edge of the same. Sector group  
addresses must be held constant during the WE pulse. See “(15) AC Waveforms for Sector Group Protection”  
in TIMING DIAGRAM and “(5) Sector Group Protection Algorithm” in FLOW CHART for sector group  
protection waveforms and algorithm.  
To verify programming of the protection circuitry, the programming equipment must force VID on address pin A9  
with CE and OE at VIL and WE at VIH. Scanning the sector group addresses (A19, A18, A17, A16, A15, A14, A13, and  
A12) while (A6, A1, A0) = (0, 1, 0) will produce a logical “1” code at device output DQ0 for a protected sector.  
Otherwise the device will produce “0” for unprotected sector. In this mode, the lower order addresses, except  
for A6, A1, and A0 are DON’T CARES. Address locations with A1 = VIL are reserved for Autoselect manufacturer  
and device codes. A-1 requires to apply to VIL on byte mode.  
It is also possible to determine if a sector group is protected in the system by writing an Autoselect command.  
Performing a read operation at the address location XX02h, where the higher order addresses (A19, A18, A17, A16,  
A15, A14, A13, and A12) are the desired sector group address will produce a logical “1” at DQ0 for a protected sector  
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