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MBM29DL161TE-70TN 参数 Datasheet PDF下载

MBM29DL161TE-70TN图片预览
型号: MBM29DL161TE-70TN
PDF下载: 下载PDF文件 查看货源
内容描述: 闪存的CMOS 16M ( 2M ×8 / 1M ×16 )位双操作 [FLASH MEMORY CMOS 16M (2M X 8/1M X 16) BIT Dual Operation]
分类和应用: 闪存存储内存集成电路光电二极管
文件页数/大小: 76 页 / 1048 K
品牌: SPANSION [ SPANSION ]
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MBM29DL16XTE/BE70/90  
• Accelerated Program Operation  
MBM29DL16XTE/BE offer accelerated program operation which enables the programming in high speed. If the  
system asserts VACC to the WP/ACC pin, the device automatically enters the acceleration mode and the time  
required for program operation will reduce to about 60%. This function is primarily intended to allow high speed  
program, so caution is needed as the sector group will temporarily be unprotected.  
The system would use a fact program command sequence when programming during acceleration mode.  
Set command to fast mode and reset command from fast mode are not necessary. When the device enters the  
acceleration mode, the device automatically set to fast mode. Therefore, the pressent sequence could be  
used for programming and detection of completion during acceleration mode.  
Removing VACC from the WP/ACC pin returns the device to normal operation. Do not remove VACC from WP/  
ACC pin while programming. See “(18) Accelerated Program Timing Diagram” in TIMING DIAGRAM.  
Erase operation at Acceleration mode is strictly prohibited.  
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