MBM29DL16XTE/BE70/90
Common Flash Memory Interface Code Table
DQ15 to
DQ0
DQ15 to
DQ0
Description
A6 to A0
Description
A6 to A0
10h
11h
12h
0051h
0052h
0059h
Erase Block Region 2
Information
Query-unique ASCII string
“QRY”
31h
32h
33h
34h
001Eh
0000h
0000h
0001h
bit 15 to bit 0 : y = number of
sectors
Primary OEM Command Set
02h: AMD/FJ standard type
13h
14h
0002h
0000h
bit 31 to bit 16 : z = size
(z×256 bytes)
Address for Primary
Extended Table
15h
16h
0040h
0000h
40h
41h
42h
0050h
0052h
0049h
Query-unique ASCII string
“PRI”
Alternate OEM Command
Set (00h = not applicable)
17h
18h
0000h
0000h
Major version number, ASCII
Minor version number, ASCII
43h
44h
0031h
0032h
Address for Alternate OEM
Extended Table
19h
1Ah
0000h
0000h
Address Sensitive Unlock
00h = Required
VCC Min (write/erase)
DQ7 to DQ4: 1 V,
DQ3 to DQ0: 100 mV
45h
46h
0000h
0002h
1Bh
1Ch
0027h
0036h
Erase Suspend
02h = To Read & Write
VCC Max (write/erase)
DQ7 to DQ4: 1 V,
DQ3 to DQ0: 100 mV
Sector Protection
00h = Not Supported
X = Number of sectors in per
group
47h
0001h
VPP Min voltage
VPP Max voltage
1Dh
1Eh
0000h
0000h
Sector Temporary
Unprotection
01h = Supported
Typical timeout per single
48h
49h
0001h
0004h
1Fh
20h
21h
22h
23h
24h
25h
0004h
0000h
000Ah
0000h
0005h
0000h
0004h
byte/word write 2N µs
Typical timeout for Min size
Sector Protection
Algorithm
buffer write 2N µs
Typical timeout per individual
sector erase 2N ms
Number of Sector for Bank 2
00h = Not Supported
1Fh = MBM29DL161TE
1Ch = MBM29DL162TE
18h = MBM29DL163TE
10h = MBM29DL164TE
1Fh = MBM29DL161BE
1Ch = MBM29DL162BE
18h = MBM29DL163BE
10h = MBM29DL164BE
Typical timeout for full chip
erase 2N ms
4Ah
00XXh
Max timeout for byte/word
write 2N times typical
Max timeout for buffer write
2N times typical
Max timeout per individual
sector erase 2N times typical
Burst Mode Type
00h = Not Supported
4Bh
4Ch
0000h
0000h
Max timeout for full chip
26h
27h
0000h
0015h
erase 2N times typical
Page Mode Type
00h = Not Supported
Device Size = 2N byte
VACC (Acceleration) Supply
Minimum
DQ7 to DQ4: 1 V,
DQ3 to DQ0: 100 mV
Flash Device Interface
description 02h : ×8/×16
28h
29h
0002h
0000h
4Dh
4Eh
0085h
0095h
Max. number of bytes in
multi-byte write = 2N
2Ah
2Bh
0000h
0000h
VACC (Acceleration) Supply
Maximum
DQ7 to DQ4: 1 V,
DQ3 to DQ0: 100 mV
Number of Erase Block
Regions within device
2Ch
0002h
Erase Block Region 1
Information
2Dh
2Eh
2Fh
30h
0007h
0000h
0020h
0000h
Boot Type
02h = MBM29DL16XBE
03h = MBM29DL16XTE
bit 15 to bit 0 : y = number of
sectors
4Fh
50h
00XXh
0001h
bit 31 to bit 16 : z = size
(z×256 bytes)
Program Suspend
01h = Supported
25
SPANSION [ SPANSION ]
