欢迎访问ic37.com |
会员登录 免费注册
发布采购

AM29LV640MH112RPCI 参数 Datasheet PDF下载

AM29LV640MH112RPCI图片预览
型号: AM29LV640MH112RPCI
PDF下载: 下载PDF文件 查看货源
内容描述: 64兆位(4M ×16位/ 8的M× 8位)的MirrorBit 3.0伏特,只有统一部门快闪记忆体与VersatileI / O控制 [64 Megabit (4 M x 16-Bit/8 M x 8-Bit) MirrorBit 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O Control]
分类和应用: 闪存内存集成电路
文件页数/大小: 62 页 / 1108 K
品牌: SPANSION [ SPANSION ]
 浏览型号AM29LV640MH112RPCI的Datasheet PDF文件第54页浏览型号AM29LV640MH112RPCI的Datasheet PDF文件第55页浏览型号AM29LV640MH112RPCI的Datasheet PDF文件第56页浏览型号AM29LV640MH112RPCI的Datasheet PDF文件第57页浏览型号AM29LV640MH112RPCI的Datasheet PDF文件第58页浏览型号AM29LV640MH112RPCI的Datasheet PDF文件第59页浏览型号AM29LV640MH112RPCI的Datasheet PDF文件第60页浏览型号AM29LV640MH112RPCI的Datasheet PDF文件第62页  
D A T A S H E E T  
REVISION SUMMARY  
Revision A (March 19, 2002)  
Revision D+1 (September 10, 2002)  
Initial release as abbreviated Advance Information  
data sheet. This document contains information that  
was previously released in publication number 25301.  
Product Selector Guide  
Added Note 2.  
Ordering Information  
Ordering Information  
Added Note 1.  
The package marking for the Fortified BGA option has  
been updated.  
Sector Erase Command Sequence  
Deleted statement that describes the outcome of  
when the Embedded Erase operation is in progress.  
Physical Dimensions  
Added drawing that shows both TS056 and TSR056  
specifications.  
Revision E (December 5, 2002)  
Product Selector Guide and Read-Only  
Characteristics  
Revision B (April 26, 2002)  
Expanded data sheet to full specification version.  
Added a 30 ns option to tPACC and tOE standard for the  
112R and 120R speed options.  
Revision C (May 23, 2002)  
Customer Lockable: SecSi Sector NOT  
Programmed or Protected at the factory.  
Changed packaging from 63-ball FBGA to 64-ball For-  
tified BGA. Changed Block Diagram: Moved VIO from  
RY/BY# to Input/Output Buffers. Changed note about  
WP#/ACC pin to indicate internal pullup to VCC. Modi-  
fied Table 4: Sector Group Protection/Unprotection Ad-  
dress Table. Changed 47h Address data from 0004h  
to 0001h in Table 9.  
Added second bullet, SecSi sector-protect verify text  
and figure 3.  
SecSi Sector Flash Memory Region, and Enter  
SecSi Sector/Exit SecSi Sector Command  
Sequence  
Noted that the ACC function and unlock bypass modes  
are not available when the SecSi sector is enabled.  
Revision D (August 8, 2002)  
Alternate CE# Controlled Erase and Program  
Operations  
Byte/Word Program Command Sequence, Sector  
Erase Command Sequence, and Chip Erase Com-  
mand Sequence  
Added tRH parameter to table.  
Erase and Program Operations  
Noted that the SecSi Sector, autoselect, and CFI  
functions are unavailable when a program or erase  
operation is in progress.  
Added tBUSY parameter to table.  
TSOP and BGA PIN Capacitance  
Common Flash Memory Interface (CFI)  
Added the FBGA package.  
Changed CFI website address  
Program Suspend/Program Resume Command  
Sequence  
Figure 6. Program Suspend/Program Resume  
Changed 15 μs typical to maximum and added 5 μs  
typical.  
Change wait time to 15 μs.  
CMOS Compatible  
Erase Suspend/Erase Resume Commands  
Added ILR row to table. Changed VIH1 and VIH2 mini-  
mum to 1.9. Removed typos in notes.  
Changed typical from 20 μs to 5 μs and added a maxi-  
mum of 20 μs.  
Hardware Reset, CMOS Tables, Erase and Program  
Operations, Temporary Sector Unprotect, and  
Alternate CE# Controlled Erase and Program  
Operations  
Special package handling instructions  
Modified the special handling wording.  
DC Characteristics table  
Added Note.  
Deleted the Iacc specification row.  
Revision E+1 (February 16, 2003)  
CFI  
Distinctive Characteristics  
Changed text in the third paragraph of CFI to read  
“reading array data.”  
Corrected performance characteristics.  
December 14, 2005  
Am29LV640MH/L  
59  
 复制成功!