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AM29LV640MH112RPCI 参数 Datasheet PDF下载

AM29LV640MH112RPCI图片预览
型号: AM29LV640MH112RPCI
PDF下载: 下载PDF文件 查看货源
内容描述: 64兆位(4M ×16位/ 8的M× 8位)的MirrorBit 3.0伏特,只有统一部门快闪记忆体与VersatileI / O控制 [64 Megabit (4 M x 16-Bit/8 M x 8-Bit) MirrorBit 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O Control]
分类和应用: 闪存内存集成电路
文件页数/大小: 62 页 / 1108 K
品牌: SPANSION [ SPANSION ]
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D A T A S H E E T  
AC CHARACTERISTICS  
Alternate CE# Controlled Erase and Program Operations  
Parameter  
Speed Options  
101, 112, 120,  
JEDEC  
tAVAV  
Std.  
tWC  
tAS  
Description  
90R 101R 112R 120R Unit  
Write Cycle Time (Note 1)  
Address Setup Time  
Address Hold Time  
Data Setup Time  
Data Hold Time  
Min  
Min  
Min  
Min  
Min  
90  
100  
110  
120  
ns  
ns  
ns  
ns  
ns  
tAVWL  
tELAX  
tDVEH  
tEHDX  
0
45  
45  
0
tAH  
tDS  
tDH  
Read Recovery Time Before Write  
(OE# High to WE# Low)  
tGHEL  
tGHEL  
Min  
0
ns  
tWLEL  
tEHWH  
tELEH  
tEHEL  
tWS  
tWH  
tCP  
WE# Setup Time  
Min  
Min  
Min  
Min  
Typ  
Typ  
Typ  
Typ  
Typ  
0
0
ns  
ns  
ns  
ns  
µs  
µs  
µs  
µs  
µs  
µs  
µs  
µs  
WE# Hold Time  
CE# Pulse Width  
45  
30  
352  
11  
22  
8.8  
tCPH  
CE# Pulse Width High  
Write Buffer Program Operation (Notes 2, 3)  
Per Byte  
Effective Write Buffer Program  
Operation (Notes 2, 4)  
Per Word  
Per Byte  
Per Word  
Byte  
Accelerated Effective Write Buffer  
Program Operation (Notes 2, 4)  
17.6  
100  
100  
90  
tWHWH1  
tWHWH1  
Single Word/Byte Program  
Operation (Note 2, 5)  
Typ  
Word  
Single Word/Byte Accelerated  
Programming Operation (Note 2,  
5)  
Byte  
Typ  
Word  
90  
µs  
tWHWH2  
tWHWH2 Sector Erase Operation (Note 7)  
Typ  
Min  
Max  
0.5  
50  
4
sec  
ns  
tRH  
RESET# High Time Before Write  
Program Valid Before Status Polling (Note 7)  
tPOLL  
µs  
Notes:  
1. Not 100% tested.  
2. See the “Erase and Programming Performance” section for  
more information.  
6. AC Specifications listed are tested with VIO = VCC. Contact  
AMD for information on AC operation with VIO VCC  
.
3. For 1–16 words/1–32 bytes programmed.  
7. When using the program suspend/resume feature, if the  
suspend command is issued within tPOLL, tPOLL must be fully  
re-applied upon resuming the programming operation. If the  
suspend command is issued after tPOLL, tPOLL is not  
required again prior to reading the status bits upon  
resuming.  
4. Effective write buffer specification is based upon a  
16-word/32-byte write buffer operation.  
5. Word/Byte programming specification is based upon a  
single word/byte programming operation not utilizing the  
write buffer.  
54  
Am29LV640MH/L  
December 14, 2005