D A T A S H E E T
ERASE AND PROGRAMMING PERFORMANCE
Parameter
Typ (Note 1) Max (Note 2)
Unit
Comments
Sector Erase Time
0.5
15
sec
Excludes 00h
programming prior to
erasure (Note 6)
Chip Erase Time
64
128
sec
Byte
Word
Byte
100
100
90
800
800
720
720
1800
57
µs
µs
µs
µs
µs
µs
µs
Single Word/Byte Program Time (Note 3)
Accelerated Single Word/Byte Program Time
(Note 3)
Word
90
Total Write Buffer Program Time (Note 4)
352
11
Excludes system level
overhead (Note 7)
Per Byte
Per Word
Effective Write Buffer Program Time (Note 5)
22
113
Total Accelerated Effective Write Buffer
Program Time (Note 4)
282
1560
µs
Per Byte
Per Word
8.8
17.6
92
49
98
µs
µs
Effective Accelerated Write Buffer Program
Time (Note 4)
Chip Program Time, using the Write Buffer
170
sec
Notes:
1. Typical program and erase times assume the following
conditions: 25°C, 3.0 V VCC. Programming specifications
assume that all bits are programmed to 00h.
5. Effective write buffer specification is calculated on a
per-word/per-byte basis for a 16-word/32-byte write buffer
operation.
6. In the pre-programming step of the Embedded Erase
algorithm, all bits are programmed to 00h before erasure.
2. Maximum values are measured at VCC = 3.0 V, worst case
temperature. Maximum values are valid up to and including
100,000 program/erase cycles.
7. System-level overhead is the time required to execute the
command sequence(s) for the program command. See
Tables 8 and 9 for further information on command
definitions.
3. Word/Byte programming specification is based upon a
single word/byte programming operation not utilizing the
write buffer.
8. The device has a minimum erase and program cycle
endurance of 100,000 cycles.
4. For 1-16 words or 1-32 bytes programmed in a single write
buffer programming operation.
LATCHUP CHARACTERISTICS
Description
Min
Max
Input voltage with respect to VSS on all pins except I/O pins
(including A9, OE#, and RESET#)
–1.0 V
12.5 V
Input voltage with respect to VSS on all I/O pins
VCC Current
–1.0 V
VCC + 1.0 V
+100 mA
–100 mA
Note: Includes all pins except VCC. Test conditions: VCC = 3.0 V, one pin at a time.
TSOP PIN AND BGA PACKAGE CAPACITANCE
Parameter Symbol
Parameter Description
Test Setup
Typ
6
Max
7.5
5.0
12
Unit
pF
pF
pF
pF
pF
pF
TSOP
CIN
Input Capacitance
VIN = 0
VOUT = 0
VIN = 0
Fine-pitch BGA
TSOP
4.2
8.5
5.4
7.5
3.9
COUT
CIN2
Output Capacitance
Fine-pitch BGA
TSOP
6.5
9
Control Pin Capacitance
Fine-pitch BGA
4.7
Notes:
1. Sampled, not 100% tested.
2. Test conditions TA = 25°C, f = 1.0 MHz.
DATA RETENTION
Parameter Description
Test Conditions
150°C
Min
10
Unit
Years
Years
Minimum Pattern Data Retention Time
125°C
20
56
Am29LV640MH/L
December 14, 2005
SPANSION [ SPANSION ]
