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AM29LV640MH112RPCI 参数 Datasheet PDF下载

AM29LV640MH112RPCI图片预览
型号: AM29LV640MH112RPCI
PDF下载: 下载PDF文件 查看货源
内容描述: 64兆位(4M ×16位/ 8的M× 8位)的MirrorBit 3.0伏特,只有统一部门快闪记忆体与VersatileI / O控制 [64 Megabit (4 M x 16-Bit/8 M x 8-Bit) MirrorBit 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O Control]
分类和应用: 闪存内存集成电路
文件页数/大小: 62 页 / 1108 K
品牌: SPANSION [ SPANSION ]
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D A T A S H E E T  
AC CHARACTERISTICS  
Erase and Program Operations  
Parameter  
Speed Options  
101,  
112,  
120,  
JEDEC  
tAVAV  
Std.  
tWC  
tAS  
Description  
90R  
101R  
112R  
120R Unit  
Write Cycle Time (Note 1)  
Address Setup Time  
Min  
Min  
90  
100  
110  
120  
ns  
ns  
tAVWL  
0
15  
45  
0
Address Setup Time to OE# low during toggle bit  
polling  
tASO  
tAH  
Min  
Min  
Min  
ns  
ns  
ns  
tWLAX  
Address Hold Time  
Address Hold Time From CE# or OE# high  
during toggle bit polling  
tAHT  
tDVWH  
tWHDX  
tDS  
tDH  
Data Setup Time  
Min  
Min  
Min  
45  
0
ns  
ns  
ns  
Data Hold Time  
tOEPH  
Output Enable High during toggle bit polling  
20  
Read Recovery Time Before Write  
(OE# High to WE# Low)  
tGHWL  
tGHWL  
Min  
0
ns  
tELWL  
tWHEH  
tWLWH  
tWHDL  
tCS  
tCH  
CE# Setup Time  
Min  
Min  
Min  
Min  
Typ  
Typ  
Typ  
Typ  
Typ  
0
0
ns  
ns  
ns  
ns  
µs  
µs  
µs  
µs  
µs  
µs  
µs  
µs  
µs  
sec  
ns  
µs  
ns  
µs  
CE# Hold Time  
tWP  
Write Pulse Width  
35  
30  
352  
11  
22  
8.8  
tWPH  
Write Pulse Width High  
Write Buffer Program Operation (Notes 2, 3)  
Per Byte  
Per Word  
Per Byte  
Per Word  
Byte  
Effective Write Buffer Program  
Operation (Notes 2, 4)  
Accelerated Effective Write Buffer  
Program Operation (Notes 2, 4)  
tWHWH1  
tWHWH1  
17.6  
100  
100  
90  
Single Word/Byte Program  
Operation (Note 2, 5)  
Typ  
Typ  
Word  
Byte  
Single Word/Byte Accelerated  
Programming Operation (Note 2, 5)  
Word  
90  
tWHWH2  
tWHWH2 Sector Erase Operation (Note 2)  
Typ  
Min  
Min  
Min  
Max  
0.5  
250  
50  
tVHH  
tVCS  
tBUSY  
tPOLL  
VHH Rise and Fall Time (Note 1)  
VCC Setup Time (Note 1)  
WE# High to RY/BY# Low  
90  
100  
110  
120  
Program Valid Before Status Polling (Note 7)  
4
Notes:  
1. Not 100% tested.  
6. AC Specifications listed are tested with VIO = VCC. Contact AMD  
for information on AC operation with VIO VCC  
7. When using the program suspend/resume feature, if the  
suspend command is issued within tPOLL, tPOLL must be fully  
re-applied upon resuming the programming operation. If the  
suspend command is issued after tPOLL, tPOLL is not required  
again prior to reading the status bits upon resuming.  
.
2. See the “Erase and Programming Performance” section for more  
information.  
3. For 1–16 words/1–32 bytes programmed.  
4. Effective write buffer specification is based upon a  
16-word/32-byte write buffer operation.  
5. Word/Byte programming specification is based upon a single  
word/byte programming operation not utilizing the write buffer.  
December 14, 2005  
Am29LV640MH/L  
47