D A T A S H E E T
Table 1, Device Bus Operations
Revision F (June 20, 2000)
In burst read operations section, changed BAA# to “H”
for “Load starting Burst Address” and Terminate
Current Burst Read Cycle; Start New Burst Read
Cycle.”
Global
The “preliminary” designation has been removed from
the document. Parameters are now stable, and only
speed, package, and temperature range combinations
are expected to change in future data sheet revisions.
Requirements for Reading Array Data in
Synchronous (Burst) Mode
Distinctive Characteristics
Modified section to clarify the description of the IND#
and burst read functions.
Changed burst access time specification for the 65R
speed option in the industrial temperature range from
19 to 18 ns.
Burst Sequence Table
Deleted table.
Product Selector Guide
Replaced tOE with tBACC to more clearly distinguish
burst mode access from asynchronous access times.
Note however, that in burst mode, tOE and tBACC spec-
ifications are identical. Changed tBACC for the 65R
speed option in the industrial temperature range from
19 to 18 ns.
Absolute Maximum Ratings
Modified maximum DC voltage and maximum positive
overshoot in Note 1 to refer to input and I/O pins.
Revision F+3 (August 19, 2002)
Product Selector Guide
Added Note #2.
Ordering Information
Burn-in processing is no longer available.
Revision F+4 (September 12, 2002)
Product Selector Guide
Requirements for Reading Array Data Array in
Asynchronous (Non-Burst) Mode
Removed Note #2.
Clarified the description of how to terminate a burst
mode read operation.
Revision F+5 (November 22, 2002)
Distinctive Characteristics
Burst Mode Read with 40 MHz CLK figure
Changed endurance to 1 million cycles.
Changed tBACC for the 65R speed option in the indus-
trial temperature range from 19 to 18 ns.
Erase Suspend/Erase Resume Command
Sequence
Read Operations table
Noted that only asynchronous reads are allowed during
the erase suspend mode.
Changed tOE and tDF for the 65R speed option in the
industrial temperature range from 19 to 18 ns.
Erase/Program Operations table, Alternate CE#
Controlled Erase/Program Operations table
Burst Mode Read table
Changed tOE and tBACC for the 65R speed option in the
industrial temperature range from 19 to 18 ns.
Changed typical sector erase time from 3 s to 1 s.
Erase and Programming Performance
Burst Mode Read figure
Changed typical/maximum sector erase time from 3
s/60 s to 1 s/15 s, respectively. Changed typical chip
erase time from 40 s to 15 s. Changed endurance to 1
million cycles. Added Asynchronous mode and Burst
mode sections.
Corrected BAA# waveform to return high before the
final clock cycle shown.
Erase and Programming Performance table, Erase
and Program Operations table, Alternate CE#
Controlled Erase and Program Operations table
Revision F+6 (June 10, 2004)
Ordering Information
Resolved differences in typical sector erase times. The
typical sector erase time for all sectors is 3 sec.
Changed temperature range from -55°C to -40°C.
Revision F+1 (November 21, 2000)
Added table of contents. Added Figure 1, In-System
Sector Protect/Unprotect Algorithms figure to docu-
ment (was missing from previous revisions).
Revision F+7 (October 29, 2004)
Ordering Information
Added:
Revision F+2 (July 22, 2002)
F= Industrial –40°C to +°85C) for Pb-free Package
K= Extended –55°C to +125°C) for Pb-free Package
Pin Description, IND# End of Burst Indicator
Clarified description of IND# function.
July 8, 2005
Am29BL162C
47
SPANSION [ SPANSION ]
