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AM29BL162CB70RZF 参数 Datasheet PDF下载

AM29BL162CB70RZF图片预览
型号: AM29BL162CB70RZF
PDF下载: 下载PDF文件 查看货源
内容描述: 16兆位( 1一M× 16位) CMOS 3.0伏只突发模式闪存 [16 Megabit (1 M x 16-Bit) CMOS 3.0 Volt-only Burst Mode Flash Memory]
分类和应用: 闪存
文件页数/大小: 50 页 / 843 K
品牌: SPANSION [ SPANSION ]
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D A T A S H E E T  
Common Flash Memory Interface (CFI)  
REVISION SUMMARY  
Corrected data for the following hex CFI addresses: 28,  
38, 39, 3C.  
Revision A (September 1998)  
Initial release.  
Command Definitions  
Revision B (December 1998)  
Global  
Reorganized and rewrote the “Reading Array Data”  
section into two sections entitled “Reading Array Data  
in Non-burst Mode” and “Reading Array Data in Burst  
Mode”. Added burst mode read figures comparing  
system frequency and device speed. Added burst  
mode status to autoselect command sequence in  
command definitions table.  
Expanded data sheet into full version.  
Revision C (December 1998)  
Global  
Added a separate set of read access specifications for  
devices at industrial temperature range. Changed read  
access specifications for 90 and 120 ns devices at  
extended temperature range to 28 ns.  
Absolute Maximum Ratings  
Corrected the maximum VCC rating to +4.0 V, and the  
maximum all other pins rating to +5.5 V.  
Ordering Information  
DC Characteristics table  
Deleted commercial temperature rating.  
Corrected the maximum rating for VIH to 5.5 V.  
Revision D (May 17, 1999)  
AC Characteristics  
Global  
In the read operations and burst mode operations  
tables, reflected the global changes in speed options  
(see the “global” revision entry).  
Changed data sheet status to preliminary. Deleted the  
70R speed option. Deleted the 70 speed option at  
extended temperature range. Added the 90R and 120R  
speed options at extended temperature range. Deleted  
the 90 and 120 speed options at extended temperature  
range.  
Burst Mode Read figure  
Corrected figure. Deleted note; OE# and BAA# should  
not be tied together. LBA# should be returned high  
after it coincides with a rising edge of CLK. BAA#  
should not be asserted before the first word of data  
appears on the bus. The data is held on the outputs for  
only tBDH after the next clock.  
Distinctive Characteristics  
Changed device endurance from program/erase cycles  
to erase cycles.  
Revision D+1 (July 2, 1999)  
Block Diagram  
Command Definitions  
Deleted redundant path between state control and  
erase voltage generator. Added sector switch block.  
Deleted RY/BY# buffer. VCC and VSS are now shown  
properly.  
Reading Array Data in Burst Mode: Added reference to  
figure 3 to the first paragraph.  
Revision E (November 2, 1999)  
Global  
Pin Configuration  
Clarified the explanation of IND#.  
All speed options are now offered only at the regulated  
voltage range of 3.0 to 3.6 V. The 90 and 120 ns speed  
options now have a tOE of 26 ns at the industrial tem-  
perature range. The 70R speed option is now available  
at the extended temperature range.  
Device Bus Operations  
Reorganized and rewrote the following subsections:  
Requirements for Reading Array Data, Read Mode,  
Burst Mode Read, IND# End of Burst Indicator, and  
Burst Mode Status. “Reading Array Data in Non-burst  
Mode”. The Burst Mode Status section is now inte-  
grated into the autoselect mode section.  
AC Characteristics  
In figures 17 and 18, deleted tGHWL. Modified OE#  
waveform.  
Device Bus Operations table: In the notes, deleted ref-  
erence to BYTE# pin.  
Physical Dimensions  
Updated drawing of SSOP to new version.  
Sector Address table: Added sector address bit set-  
tings for A19–A12.  
46  
Am29BL162C  
July 8, 2005  
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