D A T A S H E E T
DC CHARACTERISTICS
CMOS Compatible
Parameter
Description
Test Conditions
= V to 5.5 V,
Min
Typ
Max
± 1.0
35
Unit
µA
V
V
IN
SS
I
Input Load Current
LI
= V
CC
CC max
I
A9 Input Load Current
Output Leakage Current
V
= V
; A9 = 12.5 V
µA
LIT
CC
CC max
V
V
= V to 5.5 V,
OUT
SS
I
± 1.0
µA
LO
= V
CC
CC max
V
Active Read Current
CC
I
CE# = V OE# = V , 5 MHz
9
16
mA
CC1
IL,
IH
(Notes 1, 2)
V
Active Write Current
CC
I
I
I
CE# = V OE# = V
IH
20
3
30
10
10
mA
µA
µA
CC2
CC3
CC4
IL,
(Notes 2, 3, 6)
V
V
Standby Current (Note 2)
CE#, RESET# = V ± 0.3 V
CC
CC
Standby Current During
CC
RESET# = V ± ±0.3 V
3
SS
Reset (Note 2)
OE# = V
3
10
20
30
35
40
0.8
5.5
µA
µA
mA
mA
mA
V
IH
Automatic Sleep Mode
(Notes 2, 4)
V
V
= V ± 0.3 V;
IH
IL
CC
I
CC5
CC6
= V ± ±0.3 V
SS
OE# = V
8
IL
25 MHz
33 MHz
40 MHz
15
20
25
V
Burst Mode Read Current
CE# = V
OE# = V
CC
IL,
IH
I
(Notes 2, 5)
V
Input Low Voltage
Input High Voltage
–0.5
IL
V
0.7 x V
V
IH
CC
Voltage for Autoselect and
Temporary Sector Unprotect
V
V
= 3.3 V
11.5
12.5
0.45
V
ID
CC
V
Output Low Voltage
I
I
I
= 4.0 mA, V = V
V
V
OL
OL
OH
OH
CC
CC min
V
= –2.0 mA, V = V
0.85 x V
CC
OH1
OH2
CC
CC min
Output High Voltage
V
= –100 µA, V = V
V
–0.4
CC
CC
CC min
Low V Lock-Out Voltage (Note
4)
CC
V
2.3
2.5
V
LKO
Notes:
1. The I current listed is typically less than 2 mA/MHz, with OE# at V . Typical V is 3.0 V.
CC
IH
CC
2. Maximum I specifications are tested with V = V max.
CC
CC
CC
3. I active while Embedded Erase or Embedded Program is in progress.
CC
4. Automatic sleep mode enables the low power mode when addresses remain stable for t
current is 3 µA.
+ 30 ns. Typical sleep mode
ACC
5. 32-word average.
6. Not 100% tested.
July 8, 2005
Am29BL162C
29
SPANSION [ SPANSION ]
