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AM29BDS320GTC9VMI 参数 Datasheet PDF下载

AM29BDS320GTC9VMI图片预览
型号: AM29BDS320GTC9VMI
PDF下载: 下载PDF文件 查看货源
内容描述: 32兆位(2M ×16位) , 1.8伏只同时读/写,突发模式闪存 [32 Megabit (2 M x 16-Bit), 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory]
分类和应用: 闪存
文件页数/大小: 74 页 / 1108 K
品牌: SPANSION [ SPANSION ]
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P r e l i m i n a r y  
Table 3. CFI Query Identification String  
Addresses  
Data  
Description  
10h  
11h  
12h  
0051h  
0052h  
0059h  
Query Unique ASCII string “QRY”  
13h  
14h  
0002h  
0000h  
Primary OEM Command Set  
15h  
16h  
0040h  
0000h  
Address for Primary Extended Table  
17h  
18h  
0000h  
0000h  
Alternate OEM Command Set (00h = none exists)  
Address for Alternate OEM Extended Table (00h = none exists)  
19h  
1Ah  
0000h  
0000h  
Table 4. System Interface String  
Addresses  
Data  
Description  
VCC Min. (write/erase)  
D7–D4: volt, D3–D0: 100 millivolt  
1Bh  
0017h  
VCC Max. (write/erase)  
D7–D4: volt, D3–D0: 100 millivolt  
1Ch  
0019h  
1Dh  
1Eh  
1Fh  
20h  
21h  
22h  
23h  
24h  
25h  
26h  
0000h  
0000h  
0004h  
0000h  
0009h  
0000h  
0004h  
0000h  
0004h  
0000h  
VPP Min. voltage (00h = no VPP pin present)  
VPP Max. voltage (00h = no VPP pin present)  
Typical timeout per single byte/word write 2N µs  
Typical timeout for Min. size buffer write 2N  
µs (00h = not supported)  
Typical timeout per individual block erase 2N ms  
Typical timeout for full chip erase 2N ms (00h = not supported)  
Max. timeout for byte/word write 2N times typical  
Max. timeout for buffer write 2N times typical  
Max. timeout per individual block erase 2N times typical  
Max. timeout for full chip erase 2N times typical (00h = not supported)  
October 1, 2003 27243B1  
Am29BDS320G  
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