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AM29BDS128HE8VMI 参数 Datasheet PDF下载

AM29BDS128HE8VMI图片预览
型号: AM29BDS128HE8VMI
PDF下载: 下载PDF文件 查看货源
内容描述: 128或64兆比特( 8 M或4米×16位) CMOS 1.8伏只同步读/写,突发模式闪存 [128 or 64 Megabit (8 M or 4 M x 16-Bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory]
分类和应用: 闪存
文件页数/大小: 89 页 / 1587 K
品牌: SPANSION [ SPANSION ]
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D A T A S H E E T  
AC CHARACTERISTICS  
Address boundary occurs every 64 words, beginning at address  
00003Fh: (00007Fh, 0000BFh, etc.) Address 000000h is also a boundary crossing.  
C60  
C61  
3D  
C62  
3E  
C63  
3F  
C63  
3F  
C63  
3F  
C64  
40  
CLK  
3C  
Address (hex)  
(stays high)  
AVD#  
RDY(1)  
RDY(2)  
tRACC  
tRACC  
latency  
tRACC  
tRACC  
latency  
Data  
Invalid  
D60  
D61  
D62  
D63  
Read Status  
OE#,  
CE#  
(stays low)  
Notes:  
1. RDY active with data (A18 = 0 in the Configuration Register).  
2. RDY active one clock cycle before data (A18 = 1 in the Configuration Register).  
3. Cxx indicates the clock that triggers Dxx on the outputs; for example, C60 triggers D60. Figure shows the device crossing a  
bank in the process of performing an erase or program.  
Figure 47. Latency with Boundary Crossing  
into Program/Erase Bank  
May 10, 2006 27024B3  
Am29BDS128H/Am29BDS640H  
81