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AM29BDS64HE9VKI 参数 Datasheet PDF下载

AM29BDS64HE9VKI图片预览
型号: AM29BDS64HE9VKI
PDF下载: 下载PDF文件 查看货源
内容描述: 128或64兆比特( 8 M或4米×16位) CMOS 1.8伏只同步读/写,突发模式闪存 [128 or 64 Megabit (8 M or 4 M x 16-Bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory]
分类和应用: 闪存
文件页数/大小: 89 页 / 1587 K
品牌: SPANSION [ SPANSION ]
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D A T A S H E E T  
the starting location. The sixteen- and thirty-two linear  
Standard Handshaking Option  
wrap around modes operate in a fashion similar to the  
eight-word mode.  
For optimal burst mode performance on devices with  
the standard handshaking option, the host system  
must set the appropriate number of wait states in the  
flash device depending on the clock frequency.  
Table 17 shows the address bits and settings for the  
four read modes.  
Table 16 describes the typical number of clock cycles  
(wait states) for various conditions with A14-A12 set to  
101.  
Table 17. Read Mode Settings  
Address Bits  
Burst Modes  
A16  
0
A15  
0
Table 16. Wait States for Standard Handshaking  
Continuous  
Typical No. of Clock  
Conditions at Address  
Cycles after AVD# Low  
8-word linear wrap around  
16-word linear wrap around  
32-word linear wrap around  
0
1
Initial address  
7
1
0
Initial address is 3E or 3Fh (or  
offset from these addresses by  
a multiple of 64) and is at  
boundary crossing*  
1
1
7
Note: Upon power-up or hardware reset the default setting is  
continuous.  
* In the 8-, 16- and 32-word burst read modes, the address  
pointer does not cross 64-word boundaries (addresses  
which are multiples of 3Fh).  
Burst Active Clock Edge Configuration  
By default, the device will deliver data on the rising  
edge of the clock after the initial synchronous access  
time. Subsequent outputs will also be on the following  
rising edges, barring any delays. The device can be set  
so that the falling clock edge is active for all synchro-  
nous accesses. Address bit A17 determines this set-  
ting; “1” for rising active, “0” for falling active.  
The autoselect function allows the host system to  
determine whether the flash device is enabled for  
handshaking. See the Autoselect Command  
Sequence” section on page 36 for more information.  
Read Mode Configuration  
RDY Configuration  
The device supports four different read modes: contin-  
uous mode, and 8, 16, and 32 word linear wrap around  
modes. A continuous sequence begins at the starting  
address and advances the address pointer until the  
burst operation is complete. If the highest address in  
the device is reached during the continuous burst read  
mode, the address pointer wraps around to the lowest  
address.  
By default, the device is set so that the RDY pin will  
output V whenever there is valid data on the outputs.  
OH  
The device can be set so that RDY goes active one  
data cycle before active data. Address bit A18 deter-  
mines this setting; “1” for RDY active with data, “0” for  
RDY active one clock cycle before valid data. In asyn-  
chronous mode, RDY is an open-drain output.  
For example, an eight-word linear read with wrap  
around begins on the starting address written to the  
device and then advances to the next 8 word boundary.  
The address pointer then returns to the 1st word after  
the previous eight word boundary, wrapping through  
Configuration Register  
Table 18 shows the address bits that determine the  
configuration register settings for various device func-  
tions.  
May 10, 2006 27024B3  
Am29BDS128H/Am29BDS640H  
35