欢迎访问ic37.com |
会员登录 免费注册
发布采购

AM29BDS64HE9VKI 参数 Datasheet PDF下载

AM29BDS64HE9VKI图片预览
型号: AM29BDS64HE9VKI
PDF下载: 下载PDF文件 查看货源
内容描述: 128或64兆比特( 8 M或4米×16位) CMOS 1.8伏只同步读/写,突发模式闪存 [128 or 64 Megabit (8 M or 4 M x 16-Bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory]
分类和应用: 闪存
文件页数/大小: 89 页 / 1587 K
品牌: SPANSION [ SPANSION ]
 浏览型号AM29BDS64HE9VKI的Datasheet PDF文件第31页浏览型号AM29BDS64HE9VKI的Datasheet PDF文件第32页浏览型号AM29BDS64HE9VKI的Datasheet PDF文件第33页浏览型号AM29BDS64HE9VKI的Datasheet PDF文件第34页浏览型号AM29BDS64HE9VKI的Datasheet PDF文件第36页浏览型号AM29BDS64HE9VKI的Datasheet PDF文件第37页浏览型号AM29BDS64HE9VKI的Datasheet PDF文件第38页浏览型号AM29BDS64HE9VKI的Datasheet PDF文件第39页  
D A T A S H E E T  
COMMAND DEFINITIONS  
Writing specific address and data commands or  
sequences into the command register initiates device  
operations. Table 20, “Memory Array Command Defini-  
tions,on page 46 defines the valid register command  
sequences. Writing incorrect address and data values  
or writing them in the improper sequence may place the  
device in an unknown state. The system must write the  
reset command to return the device to reading array  
data. Refer to the AC Characteristics section for timing  
diagrams.  
be C0h, address bits A11–A0 should be 555h, and  
address bits A19–A12 set the code to be latched. The  
device will power up or after a hardware reset with the  
default setting, which is in asynchronous mode. The  
register must be set before the device can enter syn-  
chronous mode. The configuration register can not be  
changed during device operations (program, erase, or  
sector lock).  
Reading Array Data  
Power-up/  
The device is automatically set to reading array data  
after device power-up. No commands are required to  
retrieve data in asynchronous mode. Each bank is  
ready to read array data after completing an Embedded  
Program or Embedded Erase algorithm.  
Hardware Reset  
Asynchronous Read  
Mode Only  
After the device accepts an Erase Suspend command,  
the corresponding bank enters the erase-sus-  
pend-read mode, after which the system can read data  
from any non-erase-suspended sector within the same  
bank. After completing a programming operation in the  
Erase Suspend mode, the system may once again  
read array data from any non-erase-suspended sector  
within the same bank. See the “Erase Suspend/Erase  
Resume Commands” section on page 39 for more  
information.  
Set Burst Mode  
Configuration Register  
Command for  
Synchronous Mode  
(D15 = 0)  
Set Burst Mode  
Configuration Register  
Command for  
Asynchronous Mode  
(D15 = 1)  
Synchronous Read  
The system must issue the reset command to return a  
bank to the read (or erase-suspend-read) mode if DQ5  
goes high during an active program or erase operation,  
or if the bank is in the autoselect mode. See the “Reset  
Command” section on page 36 for more information.  
Mode Only  
Figure 3. Synchronous/Asynchronous State  
Diagram  
See also “Requirements for Asynchronous Read Oper-  
ation (Non-Burst)” section on page 11 and “Require-  
ments for Synchronous (Burst) Read Operation”  
section on page 11 for more information. The Asyn-  
chronous Read and Synchronous/Burst Read tables  
provide the read parameters, and Figure 16, “CLK Syn-  
chronous Burst Mode Read (rising active CLK),on  
page 58, Figure 18, “Synchronous Burst Mode Read,”  
on page 59, and Figure 31, “Asynchronous Mode Read  
with Latched Addresses,on page 67 show the timings.  
Read Mode Setting  
On power-up or hardware reset, the device is set to be  
in asynchronous read mode. This setting allows the  
system to enable or disable burst mode during system  
operations. Address A19 determines this setting: “1” for  
asynchronous mode, “0” for synchronous mode.  
Programmable Wait State Configuration  
The programmable wait state feature informs the  
device of the number of clock cycles that must elapse  
after AVD# is driven active before data will be available.  
This value is determined by the input frequency of the  
device. Address bits A14–A12 determine the setting  
(see Table 14, “Programmable Wait State Settings,on  
page 34).  
Set Configuration Register Command Se-  
quence  
The device uses a configuration register to set the  
various burst parameters: number of wait states, burst  
read mode, active clock edge, RDY configuration, and  
synchronous mode active. The configuration register  
must be set before the device will enter burst mode.  
The wait state command sequence instructs the device  
to set a particular number of clock cycles for the initial  
access in burst mode. The number of wait states that  
should be programmed into the device is directly  
related to the clock frequency.  
The configuration register is loaded with a three-cycle  
command sequence. The first two cycles are standard  
unlock sequences. On the third cycle, the data should  
May 10, 2006 27024B3  
Am29BDS128H/Am29BDS640H  
33