F I N A L
Valid Combinations: Deleted EC and EI options.
Revision G (May 1998)
Global
Functional Description:
Made formatting and layout consistent with other data
sheets. Used updated common tables and diagrams.
Replaced device specific text with generic text.
Test Conditions:
Distinctive Characteristics:
New section with Test Setup Figure and Test Specifica-
tions Table.
Low Power Consumption: Changed “100 µA maximum”
to “<10 µA typical”.
Switching Test Waveform:
TSOP package deleted.
Modified figure.
General Description:
Operating Ranges:
In the third paragraph, changed “100 µW in standby
mode” to 50 µW in standby mode”.
Supply Read Voltages: Replaced with generic data.
DC Characteristics:
Connection Diagrams:
Modified Figures 1 and 2.
Deleted TSOP Pinout figure.
Switching Waveform:
Pin Designations:
Corrected “DF” to “tDF” in Note 2.
Changed “Chip Enable Input” to “Chip Enable/Program
Enable Input”.
Package Capacitance:
Deleted TSOP data.
Ordering Information:
Physical Dimensions:
UV EPROM Products: Changed -75 speed option to
-90.
New section, added figures for the 32-Pin Ceramic DIP,
32-Pin Plastic DIP, and 32-Pin Plastic Leaded Chip
Carrier.
OTP EPROM Products: Changed -75 speed option to
-90.
Revision H (August 25, 1999)
Temperature Range: Added “E = Extended (–55°C to
125°C)”.
Functional Description
Package Type: Deleted “E = 32-pin Thin Small Outline
Package (TSOP) Standard Pinout (TS 032)”.
Device Erasure: Changed the dosage from 15W to
30W. Changed the exposure time from 15–20 minutes
to 30–35 minutes.
Copyright © 1998 Advanced Micro Devices, Inc. All rights reserved.
AMD, the AMD logo, and combinations thereof are trademarks of Advanced Micro Devices, Inc.
Flashrite is a trademark of Advanced Micro Devices, Inc.
Product names used in this publication are for identification purposes only and may be trademarks of their respective companies.
Am27C040
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