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AM26LV400BB-55REE 参数 Datasheet PDF下载

AM26LV400BB-55REE图片预览
型号: AM26LV400BB-55REE
PDF下载: 下载PDF文件 查看货源
内容描述: 4兆位( 512K的×8位/ 256千×16位) CMOS 3.0伏只引导扇区闪存 [4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory]
分类和应用: 闪存
文件页数/大小: 48 页 / 1129 K
品牌: SPANSION [ SPANSION ]
 浏览型号AM26LV400BB-55REE的Datasheet PDF文件第25页浏览型号AM26LV400BB-55REE的Datasheet PDF文件第26页浏览型号AM26LV400BB-55REE的Datasheet PDF文件第27页浏览型号AM26LV400BB-55REE的Datasheet PDF文件第28页浏览型号AM26LV400BB-55REE的Datasheet PDF文件第30页浏览型号AM26LV400BB-55REE的Datasheet PDF文件第31页浏览型号AM26LV400BB-55REE的Datasheet PDF文件第32页浏览型号AM26LV400BB-55REE的Datasheet PDF文件第33页  
D A T A S H E E T  
TEST CONDITIONS  
Table 7. Test Specifications  
3.3  
55R,  
70,  
90,  
120  
Test Condition  
Unit  
2.7 kΩ  
Output Load  
1 TTL gate  
Device  
Under  
Test  
Output Load Capacitance, CL  
(including jig capacitance)  
30  
100  
pF  
C
L
6.2 kΩ  
Input Rise and Fall Times  
Input Pulse Levels  
5
ns  
V
0.0–3.0  
Input timing measurement  
reference levels  
1.5  
1.5  
V
V
Output timing measurement  
reference levels  
Note:Diodes are IN3064 or equivalent  
Figure 11. Test Setup  
Key To Switching Waveforms  
WAVEFORM  
INPUTS  
OUTPUTS  
Steady  
Changing from H to L  
Changing from L to H  
Don’t Care, Any Change Permitted  
Does Not Apply  
Changing, State Unknown  
Center Line is High Impedance State (High Z)  
3.0 V  
0.0 V  
1.5 V  
1.5 V  
Input  
Measurement Level  
Output  
Figure 12. Input Waveforms and Measurement Levels  
December 4, 2006 21523D4  
Am29LV400B  
27