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AM26LV400BT-55RWAK 参数 Datasheet PDF下载

AM26LV400BT-55RWAK图片预览
型号: AM26LV400BT-55RWAK
PDF下载: 下载PDF文件 查看货源
内容描述: 4兆位( 512K的×8位/ 256千×16位) CMOS 3.0伏只引导扇区闪存 [4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory]
分类和应用: 闪存
文件页数/大小: 48 页 / 1129 K
品牌: SPANSION [ SPANSION ]
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D A T A S H E E T  
COMMAND DEFINITIONS  
Writing specific address and data commands or se-  
quences into the command register initiates device op-  
erations. Table 5 defines the valid register command  
sequences. Writing incorrect address and data val-  
ues or writing them in the improper sequence may  
place the device in an unknown state. A reset com-  
mand is then required to return the device to reading  
array data.  
however, the device ignores reset commands until the  
operation is complete.  
The reset command may be written between the se-  
quence cycles in an autoselect command sequence.  
Once in the autoselect mode, the reset command  
must be written to return to reading array data (also  
applies to autoselect during Erase Suspend).  
If DQ5 goes high during a program or erase operation,  
writing the reset command returns the device to read-  
ing array data (also applies during Erase Suspend).  
All addresses are latched on the falling edge of WE#  
or CE#, whichever happens later. All data is latched on  
the rising edge of WE# or CE#, whichever happens  
first. Refer to the appropriate timing diagrams in the  
“AC Characteristics” section.  
Autoselect Command Sequence  
The autoselect command sequence allows the host  
system to access the manufacturer and devices  
codes, and determine whether or not a sector is pro-  
tected. Table 5 shows the address and data require-  
ments. This method is an alternative to that shown in  
Table 4, which is intended for PROM programmers  
and requires VID on address bit A9.  
Reading Array Data  
The device is automatically set to reading array data  
after device power-up. No commands are required to  
retrieve data. The device is also ready to read array  
data after completing an Embedded Program or Em-  
bedded Erase algorithm.  
The autoselect command sequence is initiated by writ-  
ing two unlock cycles, followed by the autoselect com-  
mand. The device then enters the autoselect mode,  
and the system may read at any address any number  
of times, without initiating another command se-  
quence. A read cycle at address XX00h retrieves the  
manufacturer code. A read cycle at address XX01h in  
word mode (or 02h in byte mode) returns the device  
code. A read cycle containing a sector address (SA)  
and the address 02h in word mode (or 04h in byte  
mode) returns 01h if that sector is protected, or 00h if  
it is unprotected. Refer to Tables 2 and 3 for valid sec-  
tor addresses.  
After the device accepts an Erase Suspend command,  
the device enters the Erase Suspend mode. The sys-  
tem can read array data using the standard read tim-  
ings, except that if it reads at an address within  
erase-suspended sectors, the device outputs status  
data. After completing a programming operation in the  
Erase Suspend mode, the system may once again  
read array data with the same exception. See “Erase  
Suspend/Erase Resume Commands” for more infor-  
mation on this mode.  
The system must issue the reset command to re-en-  
able the device for reading array data if DQ5 goes  
high, or while in the autoselect mode. See the “Reset  
Command” section, next.  
The system must write the reset command to exit the  
autoselect mode and return to reading array data.  
See also “Requirements for Reading Array Data” in  
the “Device Bus Operations” section for more informa-  
tion. The Read Operations table provides the read pa-  
rameters, and Figure 13 shows the timing diagram.  
Word/Byte Program Command Sequence  
The system may program the device by word or byte,  
depending on the state of the BYTE# pin. Program-  
ming is a four-bus-cycle operation. The program com-  
mand sequence is initiated by writing two unlock write  
cycles, followed by the program set-up command. The  
program address and data are written next, which in  
turn initiate the Embedded Program algorithm. The  
system is not required to provide further controls or  
timings. The device automatically generates the pro-  
gram pulses and verifies the programmed cell margin.  
Table 5 shows the address and data requirements for  
the byte program command sequence.  
Reset Command  
Writing the reset command to the device resets the  
device to reading array data. Address bits are don’t  
care for this command.  
The reset command may be written between the se-  
quence cycles in an erase command sequence before  
erasing begins. This resets the device to reading array  
data. Once erasure begins, however, the device ig-  
nores reset commands until the operation is complete.  
When the Embedded Program algorithm is complete,  
the device then returns to reading array data and ad-  
dresses are no longer latched. The system can deter-  
mine the status of the program operation by using  
The reset command may be written between the se-  
quence cycles in a program command sequence be-  
fore programming begins. This resets the device to  
reading array data (also applies to programming in  
Erase Suspend mode). Once programming begins,  
December 4, 2006 21523D4  
Am29LV400B  
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