DATA SHEET
DSG9500-000: Planar Beam Lead PIN Diode
Applications
●
Designed for switching applications
Features
●
Low capacitance
●
Low resistance
●
Fast switching
●
Oxide-nitride passivated
●
Durable construction
●
High voltage
Absolute Maximum Ratings
Description
Characteristic
Value
The DSG9500-000 is designed for low resistance, low capaci-
tance and fast switching time. The oxide-nitride passivation
layers provide reliable operation and stable junction parameters
that provide complete sealing of the junction permitting use in
assemblies with some degree of moisture sealing.
Operating temperature
-65 °C to +150 °C
-65 °C to +200 °C
250 mW
Storage temperature
Power dissipation (derate
linearly to zero @ 175 °C)
Typical lead strength
8 grams pull
The DSG9500-000 is ideal for microstrip or stripline circuits and
for circuits requiring high isolation from a series mounted diode
such as broad band multi-throw switches, phase shifters, lim-
iters, attenuators and modulators.
Performance is guaranteed only under the conditions listed in the specifications table and is
not guaranteed under the full range(s) described by the Absolute Maximum specifications.
Exceeding any of the absolute maximum/minimum specifications may result in permanent
damage to the device and will void the warranty.
CAUTION: Although this device is designed to be as robust as
possible, Electrostatic Discharge (ESD) can damage
this device. This device must be protected at all times
from ESD. Static charges may easily produce poten-
tials of several kilovolts on the human body or
equipment, which can discharge without detection.
Industry-standard ESD precautions must be employed
at all times.
Low Capacitance Planar Beam Lead Diode
Breakdown
Voltage
@ 10 µA
(V)
Capacitance
Total @ 50 V,
1 MHz
Series Resistance
(From Ins. Loss
@ 3 GHz, 50 mA)
Minority Carrier
Lifetime
RF Switching
Outline
Drawing
Number
(1)
Part
Number
I = 10 mA,
Time
F
(2)
(pF)
(Ω)
I
R
= 6 mA (ns)
T
(ns)
S
Min.
Max.
Max.
Typ.
DSG9500–000
200
0.02
4.0
250
25
169-001
1. Total capacitance calculated from isolation at 9 GHz zero bias. Series resistance and capacitance are measured at microwave frequencies on a sample basis from each lot.
All diodes are characterized for capacitance at –50 V, 1 MHz, and series resistance at 1 KHz, 50 mA, measurements which correlate well with microwave measurements.
2. TS measured from RF transition, 90% to 10%, in series configuration.
Skyworks Solutions, Inc. • Phone [781] 376-3000 • Fax [781] 376-3100 • sales@skyworksinc.com • www.skyworksinc.com
200137 Rev. A • Skyworks Proprietary Information • Products and Product Information are Subject to Change Without Notice. • February 7, 2005
1
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