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STK22C48-SF45I 参数 Datasheet PDF下载

STK22C48-SF45I图片预览
型号: STK22C48-SF45I
PDF下载: 下载PDF文件 查看货源
内容描述: 2Kx8自动存储的nvSRAM [2Kx8 AutoStore nvSRAM]
分类和应用: 存储内存集成电路静态存储器光电二极管
文件页数/大小: 15 页 / 229 K
品牌: SIMTEK [ SIMTEK CORPORATION ]
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STK22C48  
nvSRAM OPERATION  
The STK22C48 has two separate modes of opera-  
tion: SRAM mode and nonvolatile mode. In SRAM  
mode, the memory operates as a standard fast static  
RAM. In nonvolatile mode, data is transferred from  
SRAM to Nonvolatile Elements (the STORE opera-  
tion) or from Nonvolatile Elements to SRAM (the  
RECALL operation). In this mode SRAM functions are  
disabled.  
POWER-UP RECALL  
During power up, or after any low-power condition  
(VCAP < VRESET), an internal RECALL request will be  
latched. When VCAP once again exceeds the sense  
voltage of VSWITCH, a RECALL cycle will automatically  
be initiated and will take tRESTORE to complete.  
If the STK22C48 is in a WRITE state at the end of  
power-up RECALL, the SRAM data will be corrupted.  
To help avoid this situation, a 10K Ohm resistor  
should be connected either between W and system  
NOISE CONSIDERATIONS  
The STK22C48 is a high-speed memory and so  
must have a high-frequency bypass capacitor of  
approximately 0.1μF connected between VCAP and  
VSS, using leads and traces that are as short as pos-  
sible. As with all high-speed CMOS ICs, normal care-  
ful routing of power, ground and signals will help  
prevent noise problems.  
VCC or between E and system VCC.  
AutoStore OPERATION  
The STK22C48 can be powered in one of three  
modes.  
During normal AutoStore operation, the STK22C48  
will draw current from VCCX to charge a capacitor  
connected to the VCAP pin. This stored charge will be  
used by the chip to perform a single STORE opera-  
tion. After power up, when the voltage on the VCAP  
pin drops below VSWITCH, the part will automatically  
disconnect the VCAP pin from VCCX and initiate a  
STORE operation.  
SRAM READ  
The STK22C48 performs a READ cycle whenever E  
and G are low and W and HSB are high. The  
address specified on pins A0-10 determines which of  
the 2,048 data bytes will be accessed. When the  
READ is initiated by an address transition, the out-  
puts will be valid after a delay of tAVQV (READ cycle  
#1). If the READ is initiated by E or G, the outputs will  
be valid at tELQV or at tGLQV, whichever is later (READ  
cycle #2). The data outputs will repeatedly respond to  
address changes within the tAVQV access time without  
the need for transitions on any control input pins, and  
will remain valid until another address change or until  
E or G is brought high, or W or HSB is brought low.  
Figure 2 shows the proper connection of capacitors  
for automatic store operation. A charge storage  
capacitor having a capacity of between 68μF and  
220μF ( 20%) rated at 6V should be provided.  
In system power mode (Figure 3), both VCCX and  
VCAP are connected to the + 5V power supply without  
the 68μF capacitor. In this mode the AutoStore func-  
tion of the STK22C48 will operate on the stored sys-  
tem charge as power goes down. The user must,  
however, guarantee that VCCX does not drop below  
3.6V during the 10ms STORE cycle.  
SRAM WRITE  
A WRITE cycle is performed whenever E and W are  
low and HSB is high. The address inputs must be  
stable prior to entering the WRITE cycle and must  
remain stable until either E or W goes high at the  
end of the cycle. The data on the common I/O pins  
DQ0-7 will be written into the memory if it is valid tDVWH  
before the end of a W controlled WRITE or tDVEH  
before the end of an E controlled WRITE.  
If an automatic STORE on power loss is not required,  
then VCCX can be tied to ground and + 5V applied to  
VCAP (Figure 4). This is the AutoStore Inhibit mode,  
in which the AutoStore function is disabled. If the  
STK22C48 is operated in this configuration, refer-  
ences to VCCX should be changed to VCAP throughout  
this data sheet. In this mode, STORE operations may  
be triggered with the HSB pin. It is not permissible to  
change between these three options “on the fly.”  
It is recommended that G be kept high during the  
entire WRITE cycle to avoid data bus contention on  
common I/O lines. If G is left low, internal circuitry  
will turn off the output buffers tWLQZ after W goes low.  
In order to prevent unneeded STORE operations,  
automatic STOREs as well as those initiated by  
externally driving HSB low will be ignored unless at  
Rev 0.3  
Document Control #ML0004  
February 2007  
8