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5962-9232404MXA 参数 Datasheet PDF下载

5962-9232404MXA图片预览
型号: 5962-9232404MXA
PDF下载: 下载PDF文件 查看货源
内容描述: [Non-Volatile SRAM, 8KX8, 55ns, CMOS, CDIP28, 0.300 INCH, CERAMIC, DIP-28]
分类和应用: 静态存储器内存集成电路
文件页数/大小: 10 页 / 57 K
品牌: SIMTEK [ SIMTEK CORPORATION ]
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STK11C68-M  
Internally, RECALL is a two step procedure. First, the  
once it has risen above it in order for the RECALL to  
SRAM data is cleared and second, the nonvolatile operate properly. Due to this automatic RECALL,  
information is transferred into the SRAM cells. The SRAM operation cannot commence until tRECALL after  
RECALL operation in no way alters the data in the VCC exceeds 4.0V. 4.0V is a typical, characterized  
EEPROM cells. The nonvolatile data can be recalled value.  
an unlimited number of times.  
If the STK11C68-M is in a WRITE state at the end of  
On power-up, once VCC exceeds the VCC sense volt- power-up RECALL, the SRAM data will be corrupted.  
age of 4.0V, a RECALL cycle is automatically initiated. To help avoid this situation, a 10K Ohm resistor should  
The voltage on the VCC pin must not drop below 4.0V be connected between W and system VCC  
.
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