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5962-9232404MXA 参数 Datasheet PDF下载

5962-9232404MXA图片预览
型号: 5962-9232404MXA
PDF下载: 下载PDF文件 查看货源
内容描述: [Non-Volatile SRAM, 8KX8, 55ns, CMOS, CDIP28, 0.300 INCH, CERAMIC, DIP-28]
分类和应用: 静态存储器内存集成电路
文件页数/大小: 10 页 / 57 K
品牌: SIMTEK [ SIMTEK CORPORATION ]
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STK11C68-M  
DEVICE OPERATION  
The STK11C68-M has two separate modes of opera- previous nonvolatile data is first performed, followed  
tion: SRAM mode and nonvolatile mode. In SRAM by a program of the nonvolatile elements. The pro-  
mode, the memory operates as an ordinary static gram operation copies the SRAM data into nonvolatile  
RAM. Innonvolatileoperation, dataistransferredfrom elements. Once a STORE cycle is initiated, further  
SRAM to EEPROM or from EEPROM to SRAM. In this input and output are disabled until the cycle is com-  
mode SRAM functions are disabled.  
pleted.  
SRAM READ  
Because a sequence of reads from specific addresses  
The STK11C68-M performs a READ cycle whenever is used for STORE initiation, it is important that no  
E and G are LOW while W is HIGH. The address otherreadorwriteaccessesinterveneinthesequence  
specified on pins A0-12 determines which of the 8192 or the sequence will be aborted and no STORE or  
data bytes will be accessed. When the READ is RECALL will take place.  
initiated by an address transition, the outputs will be  
valid after a delay of tAVQV (READ CYCLE #1). If the To initiate the STORE cycle the following READ se-  
READ is initiated by E or G, the outputs will be valid at quence must be performed:  
t
ELQV or at tGLQV, whichever is later (READ CYCLE #2).  
1. Read address 0000 (hex)  
2. Read address 1555 (hex)  
3. Read address 0AAA (hex)  
4. Read address 1FFF (hex)  
5. Read address 10F0 (hex)  
6. Read address 0F0F (hex)  
Valid READ  
Valid READ  
Valid READ  
Valid READ  
Valid READ  
Initiate STORE Cycle  
The data outputs will repeatedly respond to address  
changes within the tAVQV access time without the need  
for transitions on any control input pins, and will remain  
valid until another address change or until E or G is  
brought HIGH or W is brought LOW.  
Once the sixth address in the sequence has been  
entered, the STORE cycle will commence and the chip  
will be disabled. It is important that READ cycles and  
not WRITE cycles be used in the sequence, although  
it is not necessary that G be LOW for the sequence to  
be valid. After the tSTORE cycle time has been fulfilled,  
theSRAMwillagainbeactivatedforREADandWRITE  
operation.  
The STK11C68-M is a high speed memory and there-  
fore must have a high frequency bypass capacitor of  
approximately 0.1µF connected between DUT VCC  
and VSS using leads and traces that are as short as  
possible. As with all high speed CMOS ICs, normal  
careful routing of power, ground and signals will help  
prevent noise problems.  
HARDWARE PROTECT  
SRAM WRITE  
The STK11C68-M offers hardware protection against  
inadvertent STORE cycles through VCC Sense. A  
STORE cycle will not be initiated, and one in progress  
will discontinue, if VCC goes below 4.0V. 4.0V is a  
typical, characterized value. The datasheet specifica-  
tions are guaranteed only for VCC = 5.0 +10%.  
A write cycle is performed whenever E and W are  
LOW. The address inputs must be stable prior to  
entering the WRITE cycle and must remain stable until  
either E or W go HIGH at the end of the cycle. The  
data on pins DQ0-7 will be written into the memory if it  
is valid tDVWH before the end of a W controlled WRITE  
or tDVEH before the end of an E controlled WRITE.  
NONVOLATILE RECALL  
A RECALL cycle of the EEPROM data into the SRAM  
is initiated with a sequence of READ operations in a  
manner similar to the STORE initiation. To initiate the  
RECALL cycle the following sequence of READ op-  
erations must be performed:  
It is recommended that G be kept HIGH during the  
entire WRITE cycle to avoid data bus contention on  
commonI/Olines. IfGisleftLOW, internalcircuitrywill  
turn off the output buffers tWLQZ after W goes LOW.  
NONVOLATILE STORE  
1. Read address 0000 (hex)  
2. Read address 1555 (hex)  
3. Read address 0AAA (hex)  
4. Read address 1FFF (hex)  
5. Read address 10F0 (hex)  
6. Read address 0F0E (hex)  
Valid READ  
Valid READ  
Valid READ  
Valid READ  
Valid READ  
Initiate RECALL Cycle  
The STK11C68-MSTORE cycle is initiated by execut-  
ing sequential READ cycles from six specific address  
locations. By relying on READ cycles only, the  
STK11C68-M implements nonvolatile operation while  
remaining pin-for-pin compatible with standard 8Kx8  
SRAMs. During the STORE cycle, an erase of the  
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