Si4730/31/34/35-D60
Table 3. Reset Timing Characteristics1,2,3
(VA = 2.7 to 5.5 V, VD = 1.62 to 3.6 V, TA = –20 to 85 °C)
Parameter
Symbol
Min
100
30
Typ
—
Max
—
Unit
µs
RST Pulse Width and GPO1, GPO2/INT Setup to RST
GPO1, GPO2/INT Hold from RST
Important Notes:
t
SRST
t
—
—
ns
HRST
1. When selecting 2-wire mode, the user must ensure that a 2-wire start condition (falling edge of SDIO while SCLK is
high) does not occur within 300 ns before the rising edge of RST.
2. When selecting 2-wire mode, the user must ensure that SCLK is high during the rising edge of RST, and stays high until
after the first start condition.
3. When selecting 3-wire mode, the user must ensure that a rising edge of SCLK does not occur within 300 ns before the
rising edge of RST.
4. If GPO1 and GPO2 are actively driven by the user, then minimum tSRST is only 30 ns. If GPO1 or GPO2 is hi-Z, then
minimum tSRST is 100 µs, to provide time for on-chip 1 M devices (active while RST is low) to pull GPO1 high and
GPO2 low.
tHRST
tSRST
70%
30%
RST
70%
30%
GPO1
70%
30%
GPO2/
INT
Figure 1. Reset Timing Parameters for Busmode Select
8
Rev. 1.1
SILICON [ SILICON ]
