Si1000/1/2/3/4/5
Table 4.2. Global Electrical Characteristics (Continued)
–40 to +85 °C, 25 MHz system clock unless otherwise specified. See "AN358: Optimizing Low Power Operation of the
‘F9xx" for details on how to achieve the supply current specifications listed in this table.
Parameter
Conditions
Min
Typ
Max
Units
Digital Supply Current—CPU Active (Normal Mode, fetching instructions from Flash)
3, 4, 5, 6, 7, 8
—
4.1
5.0
mA
mA
I
V
= 1.8–3.6 V, F = 24.5 MHz
DD
DD
(includes precision oscillator current)
—
3.5
—
V
= 1.8–3.6 V, F = 20 MHz
DD
(includes low power oscillator current)
—
—
295
365
—
—
µA
µA
V
V
= 1.8 V, F = 1 MHz
= 3.6 V, F = 1 MHz
DD
DD
(includes external oscillator/GPIO cur-
rent)
—
—
—
90
—
—
—
µA
V
= 1.8–3.6 V, F = 32.768 kHz
DD
(includes SmaRTClock oscillator cur-
rent)
3, 5, 6,
226
120
µA/MHz
µA/MHz
I
Frequency Sensitivity
V
= 1.8–3.6 V, T = 25 °C,
DD
DD
7. 8
F < 10 MHz (Flash oneshot active, see
13.6)
V
= 1.8–3.6 V, T = 25 °C,
DD
F > 10 MHz (Flash oneshot bypassed,
see 13.6)
Digital Supply Current—CPU Inactive (Idle Mode, not fetching instructions from Flash)
4, 6,7,8
—
2.5
3.0
mA
mA
I
V
= 1.8–3.6 V, F = 24.5 MHz
DD
DD
(includes precision oscillator current)
—
1.8
—
V
= 1.8–3.6 V, F = 20 MHz
DD
(includes low power oscillator current)
—
—
165
235
—
—
µA
µA
V
V
= 1.8 V, F = 1 MHz
= 3.6 V, F = 1 MHz
DD
DD
(includes external oscillator/GPIO cur-
rent)
—
—
84
95
—
—
µA
V
= 1.8–3.6 V, F = 32.768 kHz
DD
(includes SmaRTClock oscillator
current)
1,6,8
µA/MHz
I
Frequency Sensitivity
V
= 1.8–3.6 V, T = 25 °C
DD
DD
42
Rev. 1.0
SILICON [ SILICON ]
