Si1000/1/2/3/4/5
4. Electrical Characteristics
In sections 4.1 and 4.2, , “V ” refers to the VDD_MCU supply voltage on Si1000/1/2/3 devices and to the
DD
VDD_MCU/DC+ supply voltage on Si1004/5 devices. The ADC, Comparator, and Port I/O specifications in
these two sections do not apply to the EZRadioPRO peripheral.
In sections 4.3 and 4.4, “V ” refers to the VDD_RF and VDD_DIG Supply Voltage. All specifications in
DD
these sections pertain to the EZRadioPRO peripheral.
4.1. Absolute Maximum Specifications
Table 4.1. Absolute Maximum Ratings
Parameter
Conditions
Min
Typ
Max
Units
Ambient Temperature under Bias
Storage Temperature
–55
–65
—
—
125
150
5.8
°C
°C
V
Voltage on any Px.x I/O Pin or
RST with Respect to GND
V
V
> 2.2 V
< 2.2 V
–0.3
–0.3
—
—
DD
DD
V
+ 3.6
DD
Voltage on VBAT with respect to One-Cell Mode
–0.3
–0.3
—
—
2.0
4.0
V
V
GND
Two-Cell Mode
Voltage on VDD_MCU or
VDD_MCU/DC+ with respect to
GND
–0.3
—
4.0
Maximum Total Current through
VBAT, DCEN, VDD_MCU/DC+ or
GND
—
—
500
mA
Maximum Output Current Sunk
by RST or any Px.x Pin
—
—
—
—
100
200
mA
mA
Maximum Total Current through
all Px.x Pins
DC-DC Converter Output Power
ESD (Human Body Model)
—
—
—
—
110
2
mW
kV
All pins except TX, RXp,
and RXn
TX, RXp, and RXn
—
—
—
—
1
kV
V
ESD (Machine Model)
All pins except TX, RXp,
and RXn
150
TX, RXp, and RXn
—
—
45
V
Note: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the device.
This is a stress rating only and functional operation of the devices at those or any other conditions above those
indicated in the operation listings of this specification is not implied. Exposure to maximum rating conditions for
extended periods may affect device reliability.
40
Rev. 1.0
SILICON [ SILICON ]
