EFM32G Data Sheet
Electrical Characteristics
Parameter
Symbol Test Condition
Sinking 0.1 mA, VDD=1.98 V,
Min
Typ
Max
Unit
—
0.20×VDD
—
V
GPIO_Px_CTRL DRIVEMODE
= LOWEST
Sinking 0.1 mA, VDD=3.0 V,
GPIO_Px_CTRL DRIVEMODE
= LOWEST
—
—
—
—
—
—
—
—
0.10×VDD
—
V
V
Sinking 1 mA, VDD=1.98 V,
GPIO_Px_CTRL DRIVEMODE
= LOW
0.10×VDD
—
Sinking 1 mA, VDD=3.0 V,
GPIO_Px_CTRL DRIVEMODE
= LOW
0.05×VDD
—
V
Output low voltage (Production
test condition = 3.0 V, DRIVE-
MODE = STANDARD)
VIOOL
Sinking 6 mA, VDD=1.98 V,
GPIO_Px_CTRL DRIVEMODE
= STANDARD
—
—
0.30×VDD
0.20×VDD
0.35×VDD
0.25×VDD
±40
V
Sinking 6 mA, VDD=3.0 V,
GPIO_Px_CTRL DRIVEMODE
= STANDARD
V
Sinking 20 mA, VDD=1.98 V,
GPIO_Px_CTRL DRIVEMODE
= HIGH
—
V
Sinking 20 mA, VDD=3.0 V,
GPIO_Px_CTRL DRIVEMODE
= HIGH
—
V
Input leakage current
IIOLEAK
High Impedance IO connected
to GROUND or VDD
±0.1
nA
I/O pin pull-up resistor
RPU
—
—
—
10
40
40
—
—
—
50
kΩ
kΩ
Ω
I/O pin pull-down resistor
Internal ESD series resistor
RPD
RIOESD
200
—
Pulse width of pulses to be re- tIOGLITCH
moved by the glitch suppres-
sion filter
ns
GPIO_Px_CTRL DRIVEMODE
= LOWEST and load capaci-
tance CL=12.5-25pF.
20+0.1CL
20+0.1CL
0.1×VDD
—
—
—
250
250
—
ns
ns
V
tIOOF
Output fall time
GPIO_Px_CTRL DRIVEMODE
= LOW and load capacitance
CL=350-600pF
I/O pin hysteresis (VIOTHR+
-
VIOHYST VDD = 1.98 - 3.8 V
VIOTHR-
)
Note:
1. If the GPIO input voltage is between 0.3×VDD and 0.7×VDD, the current consumption will increase.
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