EFM32G Data Sheet
Electrical Characteristics
4.7 Flash
Table 4.6. Flash
Parameter
Symbol
Test Condition
Min
20000
10000
10
Typ
—
Max
—
Unit
cycles
h
Flash erase cycles before failure
ECFLASH
TAMB<150 ºC
—
—
RETFLASH TAMB<85 ºC
TAMB<70 ºC
tW_PROG
—
—
years
years
µs
Flash data retention
20
—
—
Word (32-bit) programming time
Page erase time2
20
—
—
tP_ERASE
20.7
22.0
24.8
ms
Device erase time3
Erase current
tD_ERASE
41.8
—
45.0
—
49.2
71
ms
mA
mA
V
IERASE
71
Write current
IWRITE
—
—
Supply voltage during flash erase and VFLASH
write
1.98
—
3.8
Note:
1. Measured at 25 °C.
2. From setting ERASEPAGE bit in MSC_WRITECMD to 1 to reading 1 in ERASE bit in MSC_IF. Internal setup and hold times for
flash control signals are included.
3. From setting DEVICEERASE bit in AAP_CMD to 1 to reading 0 in ERASEBUSY bit in AAP_STATUS. Internal setup and hold
times for flash control signals are included.
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