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S-1004NB50I-I6T1U 参数 Datasheet PDF下载

S-1004NB50I-I6T1U图片预览
型号: S-1004NB50I-I6T1U
PDF下载: 下载PDF文件 查看货源
内容描述: [Release delay time accuracy]
分类和应用:
文件页数/大小: 42 页 / 4284 K
品牌: SII [ SEIKO INSTRUMENTS INC ]
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BUILT-IN DELAY CIRCUIT (EXTERNAL DELAY TIME SETTING) VOLTAGE DETECTOR WITH SENSE PIN  
Rev.2.1_01  
S-1004 Series  
2. 3 Power on sequence  
Apply power in the order, the VDD pin then the SENSE pin.  
As seen in Figure 27, when VSENSE ≥ +VDET, the OUT pin output (VOUT) rises and the S-1004 Series becomes the  
release status (normal operation).  
VDD  
+VDET  
VSENSE  
tRESET  
VOUT  
Figure 27  
Caution If power is applied in the order the SENSE pin then the VDD pin, an erroneous release may occur  
even if VSENSE < +VDET  
.
2. 4 Precautions when shorting between the VDD pin and the SENSE pin  
2. 4. 1 Input resistor  
Do not connect the input resistor (RA) when shorting between the VDD pin and the SENSE pin.  
A feed-through current flows through the VDD pin at the time of release. When connecting the circuit shown as  
Figure 28, the feed-through current of the VDD pin flowing through RA will cause a drop in VSENSE at the time of  
release.  
At that time, oscillation may occur if VSENSE ≤ −VDET  
.
RA  
VDD  
VSS  
OUT  
CD  
SENSE  
VDD  
Figure 28  
2. 4. 2 Parasitic resistance and parasitic capacitance  
Due to the difference in parasitic resistance and parasitic capacitance of the VDD pin and the SENSE pin,  
power may be applied to the SENSE pin first.  
Note that an erroneous release may occur if this happens (refer to "2. 3 Power on sequence").  
Caution In CMOS output product, make sure that the VDD pin input impedance does not become too  
high, regardless of the above. Since a feed-through current is large, a malfunction may occur if  
the VDD pin voltage changes greatly at the time of release.  
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