LPT16ED
30 GHz SiGe Bipolar Transistor
Final
Die and Pad Description
X length
Die edge
Collector
Emitter2
Y length
Emitter1
Base
0,0
Dimensions are relative to the 0,0 cut die corner.
Feature
Specification
10 mil +/- 1mil
15.3 mil +/- 1mil
14.5 mil +/- 1mil
2.9 mil +/- 0.1mil
6 mil +/- 0.1mil
1 mil +/- 0.05mil
0.2 mil
Comments
Die thickness
X length
Y length
Pad diameter
Pad pitch
Pads are circular.
Pad center to pad centre
Pad/bump height
Pad/bump co-planarity
Pad Center
Collector
Emitter1
Base
Position (X mil, Y mil) +/- 0.7mil relative to the 0,0 cut die corner
5, 11
5, 5
11, 5
11, 11
Emitter 2
Please refer to Document 01-MS-001 for SiGe’s die inspection criteria.
For S-parameter data, please refer to SiGe Document 07SP001.
38-DST-01 ꢀRev 2.3 ꢀSept 5/02
4 of 5
SIGE [ SIGE SEMICONDUCTOR, INC. ]
