LPT16ED
30 GHz SiGe Bipolar Transistor
Final
Absolute Maximum Ratings
Operation in excess of any one of Absolute Maximum Ratings may result in permanent damage. This is a high
performance RF device with ESD rating < 2keV. Handling and assembly of this device should be done at ESD
protected workstations.
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
T
T
j
T
STG
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Base Current
Total Power Dissipation
Junction Temperature
Storage Temperature
-65
Min.
Max.
+13.0
+4.0
+1.5
80
2.0
250
+150
+150
Unit
V
V
V
mA
mA
mW
°C
°C
DC Electrical Characteristics
Conditions: T
A
= unless otherwise specified 25°C
Symbol
V
BE
BV
CEO
BV
CES
BV
EBO
BV
CBO
V
A
I
CBO
I
EBO
h
FE
Parameter
Base-emitter voltage
Collector-emitter
breakdown voltage
Collector-emitter
breakdown voltage
Emitter-base breakdown
voltage
Collector-base
breakdown voltage
Early voltage
Collector-base cutoff
current
Emitter-base cutoff
current
DC current gain
Condition
I
C
= 1µA
Open base
Base-emitter shorted via
100kΩ
I
E
= 100µA, open
collector
Open emitter
I
C
= 10mA, V
CE
= 3V
V
CB
= 5V and I
E
= 0
V
EB
= 1.5V and I
C
= 0
V
CE
= 2V, I
C
= 20mA
5
50
10
60
Min.
670
4.0
14
2.0
14
100
Typ.
687
4.5
15.0
2.3
15.0
200
Max.
700
5.0
16
2.6
16
300
100
15
150
Unit
mV
V
V
V
V
V
pA
µA
38-DST-01
Rev 2.3
Sept 5/02
2 of 5
SIGE [ SIGE SEMICONDUCTOR, INC. ]
