LPT16ED
30 GHz SiGe Bipolar Transistor
Final
Applications
Low phase noise oscillators up to 16 GHz
VCO’s, DRO’s and YIG oscillators
Point-to-point radios
Satellite communications
Fiber optics, OC-192 and OC-768
Local Multipoint Distribution Systems, LMDS
Product Description
The LPT16ED is a silicon germanium low phase
noise, high frequency NPN transistor for oscillator
applications up to 16GHz.
The transistor exhibits low 1/f noise and provides
+13 dBm typical output power at V
CE
of 3V and I
C
equal to 20 mA. It is easily operated from a single
supply voltage with appropriate external passive
components.
The silicon germanium technology used in this device
provides outstanding high-frequency performance
combined with high thermal conductivity and superior
reliability under harsh operating and storage
conditions.
A complete mechanical description of the transistor is
available under SiGe Semiconductor Document
07MS001.
Features
Low 1/f noise: -142 dBc/Hz at 100 Hz offset
Phase noise: -167 dBc/Hz at 100 kHz offset
Output power up to +13 dBm
Operation down to 1 volt, 2 mA
Gold bump pads for wire bond or flip chip (for
direct die attachment)
Ordering Information
Type
LPT16ED
Package
Bare Die
Remark
Shipped in
Waffle Pack
Functional Block Diagram
C
B
E
38-DST-01
Rev 2.3
Sept 5/02
1 of 5
SIGE [ SIGE SEMICONDUCTOR, INC. ]
