R
DS (ON)
−
Tc
5
Common source
VGS
=
10 V
Pulse Test
100
Common source
Tc
=
25°C
Pulse Test
I
DR
−
V
DS
Drain-source ON-resistance
RDS (ON) (Ω)
4
Drain reverse current IDR (A)
10
3
1.9
2
3.7
ID
=
1 A
1
5
10
3
0.1
0
1
−0.6
VGS
=
0 V
−0.9
−1.2
−1.5
1
0
−80
−40
0
40
80
120
160
−0.3
Case temperature Tc (°C)
Drain-source voltage
VDS
(V)
C – V
DS
10000
5
V
th
−
Tc
Vth (V)
(pF)
1000
4
Ciss
Gate threshold voltage
Capacitance C
3
100
Coss
2
10
Common source
VGS
=
0 V
f =1MHz
Tc
=
25°C
1
10
1
Crss
1
0.1
100
0
−80
Common source
VDS
=
10 V
ID
=
1mA
Pulse Test
−40
0
40
80
120
160
Drain-source voltage
VDS
(V)
Case temperature Tc (°C)
P
D
−
Tc
100
500
Dynamic input / output
characteristics
20
Drain power dissipation PD (W)
(V)
80
400
200
VDD
=
100 V
16
Drain-source voltage
40
200
VGS
100
8
Common source
ID
=
3.7 A
Tc
=
25°C
4
Pulse Test
20
0
0
40
80
120
160
0
0
4
8
12
16
20
0
Case temperature Tc (°C)
Total gate charge Qg (nC)
4/5
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Gate-source voltage
60
300
400
12
VGS (V)
VDS
VDS