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TK4P60DB 参数 Datasheet PDF下载

TK4P60DB图片预览
型号: TK4P60DB
PDF下载: 下载PDF文件 查看货源
内容描述: 硅N沟道MOS型(I ?? - 莫萨? | ) [Silicon N Channel MOS Type (π-MOSⅦ)]
分类和应用:
文件页数/大小: 5 页 / 310 K
品牌: SHENZHENFREESCALE [ ShenZhen FreesCale Electronics. Co., Ltd ]
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I
D
– V
DS
5
Common source
Tc
=
25°C
Pulse Test
8
10
8
7
6.5
3
6.4
8
10
I
D
– V
DS
7.5
7
Common source
Tc
=
25°C
Pulse Test
4
(A)
ID
ID
(A)
4.8
6.5
3.2
6
1.6
VGS
=
5.5V
Drain current
2
6
1
5.5
VGS
=
5 V
Drain current
0
0
2
4
6
8
10
0
0
10
20
30
40
50
Drain-source voltage
VDS
(V)
Drain-source voltage
VDS
(V)
I
D
– V
GS
8
Common source
VDS
=
20 V
Pulse Test
20
V
DS
– V
GS
Common source
Tc
=
25°C
Pulse Test
6.4
(V)
VDS
Drain-source voltage
16
ID (A)
4.8
12
Drain current
3.2
25
100
Tc
= −55
°C
8
ID
=
3.7 A
1.6
4
1.9
1
0
0
2
4
6
8
10
0
0
4
8
12
16
20
Gate-source voltage
VGS
(V)
Gate-source voltage
VGS
(V)
|Y
fs
| – I
D
(S)
10
Common source
VDS
=
20 V
Pulse Test
100
Common source
VGS
=
10 V
Tc
=
25°C
Pulse Test
R
DS (ON)
– I
D
|Y
fs
|
Forward transfer admittance
Tc
= −55
°C
25
1
100
Drain-source ON-resistance
RDS (ON) (Ω)
10
10
1
0.1
0.1
1
0.1
0.1
1
10
Drain current ID (A)
Drain current ID (A)
3/5
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