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TK12P60W 参数 Datasheet PDF下载

TK12P60W图片预览
型号: TK12P60W
PDF下载: 下载PDF文件 查看货源
内容描述: 硅N沟道MOS型 [Silicon N Channel MOS Type]
分类和应用:
文件页数/大小: 5 页 / 760 K
品牌: SHENZHENFREESCALE [ ShenZhen FreesCale Electronics. Co., Ltd ]
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r
th
– t
w
Normalized transient thermal impedance
r
th
/R
th(ch-c)
10
1
Duty
=
0.5
0.2
0.1
0.1 0.05
0.02
0.01
0.01
10
µ
Single pulse
T
Duty
=
t/T
Rth(ch-c)
=
1.25°C/W
1m
10 m
100 m
1
10
PDM
t
100
µ
Pulse width
t
w
(s)
P
D
– T
c
120
100
E
AS
– T
ch
(W)
100
(mJ)
E
AS
Avalanche energy
0
40
80
120
160
80
P
D
80
Power dissipation
60
60
40
40
20
20
0
0
25
50
75
100
125
150
Case temperature
T
c
(°C)
Channel temperature (initial)
T
ch
(°C)
Safe operating area
100
ID max (pulse)
*
1 ms
*
100 ns
*
15 V
−15
V
100
µs
*
1
µs
*
B
VDSS
I
AR
V
DD
Waveform
V
DS
ID max (continuous)
10
(A)
10
µs
*
1
This area is limited by
RDS(ON)
0.1
DC operation
Tc
=
25°C
I
D
Drain current
BVDSS
1
2
・L・I
AR
R
G
=
25
Ω,
V
DD
=
90 V EAS =
BVDSS
V
DD
2
0.01
*
: Single pulse Tc
=
25°C
Curves must be derated
linearly with increase in
temperature.
1
10
VDSS max
100
1000
0.001
0.1
Drain-source voltage
V
DS
(V)
5/5
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