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TK12P60W 参数 Datasheet PDF下载

TK12P60W图片预览
型号: TK12P60W
PDF下载: 下载PDF文件 查看货源
内容描述: 硅N沟道MOS型 [Silicon N Channel MOS Type]
分类和应用:
文件页数/大小: 5 页 / 760 K
品牌: SHENZHENFREESCALE [ ShenZhen FreesCale Electronics. Co., Ltd ]
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TK12P60W
Silicon N Channel MOS Type (DTMOSⅣ)
Switching Regulator Applications
Low drain-source ON-resistance : R
DS (ON)
=
0.256Ω
(typ.)
by used to Super Junction Structure : DTMOS
Easy to control Gate switching
Enhancement-mode: V
th
= 2.7 to 3.7 V (V
DS
= 10 V, I
D
= 0.6 mA)
6.6
±
0.2
5.34
±
0.13
1.08±0.2
Unit: mm
0.58MAX
Absolute Maximum Ratings
(Ta
=
25°C)
Characteristics
Drain-source voltage
Gate-source voltage
Drain current (Continuous)
Drain current (Pulsed)
(Note 1)
(Note 1)
Symbol
V
DSS
V
GSS
I
D
I
DP
P
D
E
AS
I
AR
I
DR
I
DRP
T
ch
T
stg
Rating
600
±30
11.5
46.0
100
93
5.8
11.5
46.0
150
-55 to 150
Unit
V
V
A
A
W
mJ
A
A
A
°C
°C
2.3
±
0.1
0.76
±
0.12
2.29
0.07
±
0.07
1
1.
2.
2
3
Drain power dissipation (Tc
=
25°C)
Single pulse avalanche energy
(Note 2)
Avalanche current
Drain reverse current (Continuous)
(Note 1)
Drain reverse current (Pulsed)
Channel temperature
Storage temperature range
(Note 1)
GATE
DRAIN
(HEAT
SINK)
3. SOURCE
JEDEC
JEITA
TOSHIBA
2-7K1A
Weight : 0.36 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability
Handbook (“Handling Precautions”/“Derating Concept and Methods’’) and individual reliability data (i.e.
reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristics
Thermal resistance, channel to case
Symbol
R
th (ch-c)
Max
1.25
Unit
Internal Connection
2
°C/W
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: V
DD
= 90 V, T
ch
= 25°C (initial), L = 4.83 mH, R
G
= 25
Ω,
I
AR
= 5.8 A
This transistor is an electrostatic-sensitive device. Handle with care.
1
3
1/5
www.freescale.net.cn
1.52
+0.25
−0.12
1.14MAX
1.01MAX
6.1
±
0.12
+0.4
10.0
−0.6