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TK12P60W 参数 Datasheet PDF下载

TK12P60W图片预览
型号: TK12P60W
PDF下载: 下载PDF文件 查看货源
内容描述: 硅N沟道MOS型 [Silicon N Channel MOS Type]
分类和应用:
文件页数/大小: 5 页 / 760 K
品牌: SHENZHENFREESCALE [ ShenZhen FreesCale Electronics. Co., Ltd ]
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I
D
– V
DS
10
Common source
Ta
=
25°C
Pulse test
10
20
7
6.5
9
6
6
7.5
Common source
Ta
=
25°C
Pulse test
I
D
– V
DS
10
9
7.5
8
(A)
(A)
8
8
16
I
D
I
D
12
7
Drain current
Drain current
6.5
8
6
4
5.5
VGS
=
5 V
4
5.5
2
VGS
=
5 V
0
0
1
2
3
4
5
0
0
2
4
6
8
10
Drain-source voltage
V
DS
(V)
Drain-source voltage
V
DS
(V)
I
D
– V
GS
20
Common source
VDS
=
10 V
Ta
=
25°C
16
Pulse test
8
V
DS
– V
GS
Common source
Ta
=
25°C
Pulse test
6
(A)
I
D
Drain-source voltage
12
Drain current
V
DS
(V)
4
ID
=
11.5 A
8
2
4
5.8
2.9
0
0
2
4
6
8
10
0
0
4
8
12
16
20
Gate-source voltage
V
GS
(V)
Gate-source voltage
V
GS
(V)
V
DSS
– T
a
700
Common source
VGS
=
0 V
ID
=
10 mA
660
Pulse test
10
R
DS(ON)
– I
D
(V)
Drain-source on-resistance
R
DS(ON)
(Ω)
V
DSS
1
Drain-source voltage
620
580
0.1
Common source
VGS
=
10 V
Ta
=
25°C
Pulse test
0.01
0.1
1
10
100
540
500
−100
−50
0
50
100
150
200
Ambient temperature
T
a
(°C)
Drain current
I
D
(A)
3/5
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