SUD70N03-06P
N-Channel
30 V (D-S) 175 ??C MOSFET
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Transconductance
120
100
G
FS
−
Transconductance (S)
80
60
40
20
0
0
10
20
30
40
50
125_C
T
C
=
−55_C
25_C
R
DS(on)
−
On-Resistance (W)
0.012
0.015
On-Resistance vs. Drain Current
0.009
V
GS
= 4.5 V
0.006
V
GS
= 10 V
0.003
0.000
0
20
40
60
80
100
I
D
−
Drain Current (A)
4000
3500
3000
2500
2000
1500
1000
500
0
0
5
10
15
20
25
30
V
DS
−
Drain-to-Source Voltage (V)
C
rss
C
oss
I
D
−
Drain Current (A)
10
V
DS
= 15 V
I
D
= 50 A
Capacitance
C
iss
V GS
−
Gate-to-Source Voltage (V)
Gate Charge
8
C
−
Capacitance (pF)
6
4
2
0
0
10
20
30
40
50
Q
g
−
Total Gate Charge (nC)
2.0
On-Resistance vs. Junction Temperature
V
GS
= 10 V
I
D
= 20 A
I S
−
Source Current (A)
100
Source-Drain Diode Forward Voltage
r
DS(on)
−
On-Resiistance
(Normalized)
1.5
T
J
= 150_C
10
1.0
T
J
= 25_C
0.5
0.0
−50
−25
0
25
50
75
100
125
150
175
1
0
0.3
0.6
0.9
1.2
1.5
V
SD
−
Source-to-Drain Voltage (V)
T
J
−
Junction Temperature (_C)
3/5
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