SUD70N03-06P
N-Channel
30 V (D-S) 175 ??C MOSFET
SPECIFICATIONS (T
J
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
b
Drain Source On State
Drain-Source On-State
Forward
Resistance
b
V
(BR)DSS
V
GS(th)
I
GSS
I
DSS
I
D(on)
r
DS(on)
g
fs
V
GS
= 0 V, I
D
= 250
mA
V
DS
= V
GS
, I
D
= 250
mA
V
DS
= 0 V, V
GS
=
"20
V
V
DS
= 30 V, V
GS
= 0 V
V
DS
= 30 V, V
GS
= 0 V, T
J
= 125_C
V
DS
= 5 V, V
GS
= 10 V
V
GS
= 10 V, I
D
= 20 A
V
GS
= 10 V, I
D
= 20 A, T
J
= 125_C
V
GS
= 4.5 V, I
D
= 20 A
Transconductance
b
V
DS
= 15 V, I
D
= 20 A
20
0.0072
50
0.0046
0.006
0.0105
0.009
S
W
30
1.0
3.0
"100
1
50
V
nA
mA
A
Symbol
Test Condition
Min
Typ
a
Max
Unit
Dynamic
a
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate
Charge
c
Charge
c
Charge
c
Gate-Source
Gate-Drain
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
V
DD
= 15 V, R
L
= 0.3
W
I
D
^
50 A, V
GEN
= 10 V, R
g
= 2.5
W
f = 1 MHz
0.9
V
DS
= 15 V, V
GS
= 4.5 V, I
D
= 50 A
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
3100
565
255
21
10
7.5
2.0
12
12
30
10
3.4
20
20
45
15
ns
W
30
nC
p
pF
Gate Resistance
Turn-On Delay Time
c
Rise
Time
c
Turn-Off Delay Time
c
Fall Time
c
Source-Drain Diode Ratings and Characteristic (T
C
= 25_C)
Pulsed Current
Diode Forward Voltage
b
Source-Drain Reverse Recovery Time
I
SM
V
SD
t
rr
I
F
= 100 A, V
GS
= 0 V
I
F
= 50 A, di/dt = 100 A/ms
1.2
35
100
1.5
70
A
V
ns
Notes
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width
v
300
ms,
duty cycle
v
2%.
c. Independent of operating temperature.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
200
V
GS
= 10 thru 6 V
160
I D
−
Drain Current (A)
5V
I D
−
Drain Current (A)
80
100
Transfer Characteristics
120
60
80
4V
40
T
C
= 125_C
20
25_C
−55_C
0
40
3V
0
0
2
4
6
8
10
V
DS
−
Drain-to-Source Voltage (V)
0
1
2
3
4
5
V
GS
−
Gate-to-Source Voltage (V)
2/5
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