SUD70N03-06P
N-Channel
30 V (D-S) 175 ??C MOSFET
PRODUCT SUMMARY
V
DS
(V)
30
FEATURES
I
D
(A)
b
70
70
r
DS(on)
(W)
0.006 @ V
GS
= 10 V
0.009 @ V
GS
= 4.5 V
D
TrenchFETr Power MOSFET
D
High Current
D
100% R
g
Tested
APPLICATIONS
D
DC/DC Converters
−
Optimized For Low Side
D
Synchronous Rectifiers
D
TO-252
Drain Connected to Tab
G
D
S
G
Top View
Ordering Information: SUD70N03-06P
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
a
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
a
Avalanche Current, single pulse
Avalanche Energy, single pulse
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
L = 0 1 mH
0.1
T
C
= 25_C
T
A
= 25_C
T
C
= 25_C
T
C
= 100_C
Symbol
V
DS
V
GS
I
D
I
DM
I
S
I
AS
E
AS
P
D
T
J
, T
stg
Limit
30
"20
70
70
b
100
27
45
101
88
8.3
a
−55
to 175
Unit
V
A
mJ
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction to Ambient
a
Junction-to-Ambient
Maximum Junction-to-Case
Notes
a. Surface Mounted on FR4 Board, t
v
10 sec.
b. Limited by package.
t
v
10 sec
Steady State
Symbol
R
thJA
R
thJC
Typical
15
40
1.4
Maximum
18
50
1.7
Unit
_C/W
C/W
1/5
www.freescale.net.cn
SHENZHENFREESCALE [ ShenZhen FreesCale Electronics. Co., Ltd ]
