SUD50P06-15
P-Channel 60 V (D-S) MOSFET
TYPICAL CHARACTERISTICS
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
- 50
1
R
DS(on)
- On-Resistance (Normalized)
V
GS
= 10 V
I
D
= 17 A
I
S
- Source Current (A)
100
T
J
= 150 °C
10
T
J
= 25 °C
- 25
0
25
50
75
100
125
150
0.0
T
J
- Junction Temperature (°C)
0.3
0.6
0.9
1.2
V
SD
- Source-to-Drain Voltage (V)
1.5
On-Resistance vs. Junction Temperature
Source-Drain Diode Forward Voltage
THERMAL RATINGS
(25 °C, unless otherwise noted)
60
100
Limited by R
DS(on)*
50
I
D
- Drain Current (A)
P(t) = 0.0001
I
D
- Drain Current (A)
40
30
10
BVDSS
Limited
20
P(t) = 0.001
10
T
C
= 25 °C
Single Pulse
P(t) = 0.01
P(t) = 0.1
P(t) = 1
0
0
25
50
75
100
125
150
T
C
- Case Temperature (°C)
1
0.1
1
10
100
V
DS
- Drain-to-Source Voltage (V)
* V
GS
> minimum V
GS
at which R
DS(on)
is specified
Drain Current vs. Case Temperature
2
1
Duty Cycle = 0.5
Normalized Effective Transient
Thermal Impedance
Safe Operating Area
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10
-4
10
-3
10
-2
Square Wave Pulse Duration (s)
10
-1
1
Normalized Thermal Transient Impedance, Junction-to-Case
4/7
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