SUD50P06-15
P-Channel 60 V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
V
DS
(V)
- 60
R
DS(on)
()
0.015 at V
GS
= - 10 V
0.020 at V
GS
= - 4.5 V
I
D
(A)
- 50
d
- 50
d
• TrenchFET
®
Power MOSFET
• Material categorization:
For definitions of compliance please see
TO-252
APPLICATIONS
• Load Switch
S
G
Drain Connected to Tab
G
D
Top View
Ordering Information
SUD50P06-15-GE3 (Lead (Pb)-free and Halogen-free)
SUD50P06-15-T4-GE3 (Lead (Pb)-free and Halogen-free)
D
P-Channel MOSFET
S
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25 °C, unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 175 °C)
Pulsed Drain Current
Avalanche Current
Single Pulse Avalanche Energy
Power Dissipation
Operating Junction and Storage Temperature Range
a
Symbol
V
DS
V
GS
T
C
= 25 °C
T
C
= 125 °C
I
D
I
DM
I
AS
L = 0.1 mH
T
C
= 25 °C
T
A
= 25 °C
E
AS
P
D
T
J
, T
stg
Limit
- 60
± 20
- 50
d
- 27.5
- 80
- 50
125
113
c
2.5
b, c
- 55 to 150
Unit
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambient
b
Junction-to-Case
Notes:
a. Duty cycle
1 %.
b. When mounted on 1" square PCB (FR-4 material).
c. See SOA curve for voltage derating.
d. Package limited.
t
10 s
Steady State
Symbol
R
thJA
R
thJC
Typical
15
40
0.82
Maximum
18
50
1.1
°C/W
Unit
1/7
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