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SUD50P06-15 参数 Datasheet PDF下载

SUD50P06-15图片预览
型号: SUD50P06-15
PDF下载: 下载PDF文件 查看货源
内容描述: P沟道60 V (D -S )的MOSFET [P-Channel 60 V (D-S) MOSFET]
分类和应用:
文件页数/大小: 7 页 / 418 K
品牌: SHENZHENFREESCALE [ ShenZhen FreesCale Electronics. Co., Ltd ]
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SUD50P06-15
P-Channel 60 V (D-S) MOSFET
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
Parameter
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
V
DS
V
GS(th)
I
GSS
I
DSS
I
D(on)
V
GS
= 0 V, I
D
= - 250 µA
V
DS
= V
GS
, I
D
= - 250 µA
V
DS
= 0 V, V
GS
= ± 20 V
V
DS
= - 60 V, V
GS
= 0 V
V
DS
= - 60 V, V
GS
= 0 V, T
J
= 125 °C
V
DS
= - 60 V, V
GS
= 0 V, T
J
= 150 °C
V
DS
= -5 V, V
GS
= - 10 V
V
GS
= - 10 V, I
D
= - 17 A
Drain-Source On-State Resistance
a
R
DS(on)
V
GS
= - 10 V, I
D
= - 50 A, T
J
= 125 °C
V
GS
= - 10 V, I
D
= - 50 A, T
J
= 150 °C
V
GS
= - 4.5 V, I
D
= - 14 A
Forward Transconductance
Dynamic
b
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
c
Gate-Source Charge
c
Gate-Drain Charge
c
Turn-On Delay Time
c
Rise
Time
c
Turn-Off Delay Time
c
Fall Time
c
Continuous Current
Pulsed Current
Forward Voltage
a
Reverse Recovery Time
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
°C
b
- 50
- 80
I
F
= - 50 A, V
GS
= 0 V
I
F
= - 50 A, dI/dt = 100 A/µs
-1
45
- 1.6
70
A
V
ns
I
S
I
SM
V
SD
t
rr
V
DD
= - 30 V, R
L
= 0.6
I
D
- 50 A, V
GEN
= - 10 V, R
G
= 6
V
DS
= - 30 V, V
GS
= - 10 V, I
D
= - 50 A
V
GS
= 0 V, V
DS
= - 25 V, f = 1 MHz
4950
480
405
110
19
28
15
70
175
175
23
105
260
260
ns
165
nC
pF
a
Symbol
Test Conditions
Min.
- 60
-1
Typ.
Max.
Unit
-3
± 100
-1
- 50
- 100
V
nA
µA
A
- 50
0.012
0.015
0.025
0.028
0.020
61
g
fs
V
DS
= - 15 V, I
D
= - 17 A
S
Source-Drain Diode Ratings and Characteristics
T
C
= 25
Notes:
a. Pulse test; pulse width
300 µs, duty cycle
2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
2/7
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