SUD50N04-8m8P
N-Channel
40 V (D-S) MOSFET
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
60
45
I
D
- Drain Current (A)
Package Limited
30
15
0
0
25
50
75
100
125
150
T
C
- Case Temperature (°C)
Current Derating*, Junction-to-Case
4.0
3.5
3.0
Power (W)
Power (W)
0
25
50
75
100
125
150
2.5
2.0
1.5
1.0
0.5
0.0
20
10
0
0
25
50
75
100
125
150
70
60
50
40
30
T
J
- Junction Temperature (°C)
T
J
- Junction Temperature (°C)
Power Derating, Junction-to-Ambient
Power Derating, Junction-to-Case
* The power dissipation P
D
is based on T
J(max)
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
5/9
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