SUD50N04-8m8P
N-Channel
40 V (D-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
40
R
DS(on)
(Ω)
0.0088 at V
GS
= 10 V
0.0105 at V
GS
= 4.5 V
I
D
(A)
a
50
50
Q
g
(Typ.)
16 nC
FEATURES
•
Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET
®
Power MOSFET
• 100 % UIS Tested
• 100 % R
g
Tested
• PWM Optimized
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
TO-252
• LCD Display Backlight Inverters
• DC/DC Converters
D
Drain Connected to Tab
G
D
S
G
Top
View
Ordering Information:
SUD50N04-8m8P-4GE3 (Lead (Pb)-free and Halogen-free)
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS
T
A
= 25 °C, unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
T
C
= 25 °C
T
C
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
T
C
= 25 °C
T
A
= 25 °C
L = 0.1 mH
T
C
= 25 °C
T
C
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
Symbol
V
DS
V
GS
Limit
40
± 20
50
a
44
14
b
11.2
b
100
40
2.6
b
30
45
48.1
30.8
3.1
b
2.0
b
- 55 to 150
Unit
V
Continuous Drain Current (T
J
= 150 °C)
I
D
I
DM
I
S
I
AS
E
AS
Pulsed Drain Current
Continuous Source-Drain Diode Current
Single Pulse Avalanche Current
Avalanche Energy
A
mJ
Maximum Power Dissipation
P
D
T
J
, T
stg
W
Operating Junction and Storage Temperature Range
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Case
Notes:
a. Package limited.
b. Surface mounted on 1" x 1" FR4 board.
b
Steady State
Steady State
Symbol
R
thJA
R
thJC
Typical
32
2.1
Maximum
40
2.6
Unit
°C/W
1/9
www.freescale.net.cn
SHENZHENFREESCALE [ ShenZhen FreesCale Electronics. Co., Ltd ]
