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SUD50N04-8M8P 参数 Datasheet PDF下载

SUD50N04-8M8P图片预览
型号: SUD50N04-8M8P
PDF下载: 下载PDF文件 查看货源
内容描述: N沟道40 V (D -S )的MOSFET [N-Channel 40 V (D-S) MOSFET]
分类和应用:
文件页数/大小: 9 页 / 521 K
品牌: SHENZHENFREESCALE [ ShenZhen FreesCale Electronics. Co., Ltd ]
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SUD50N04-8m8P
N-Channel
40 V (D-S) MOSFET
SPECIFICATIONS
T
J
= 25 °C, unless otherwise noted
Parameter
Static
Drain-Source Breakdown Voltage
V
DS
Temperature Coefficient
V
GS(th)
Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
Drain-Source On-State Resistance
a
Forward Transconductance
a
Dynamic
b
Symbol
V
DS
ΔV
DS
/T
J
ΔV
GS(th)
/T
J
V
GS(th)
I
GSS
I
DSS
I
D(on)
R
DS(on)
g
fs
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
I
S
I
SM
V
SD
t
rr
Q
rr
t
a
t
b
Test Conditions
V
GS
= 0 V, I
D
= 250 µA
I
D
= 1.0 mA
V
DS
= V
GS
, I
D
= 250 µA
V
DS
= 0 V, V
GS
= ± 20 V
V
DS
= 40 V, V
GS
= 0 V
V
DS
= 40 V, V
GS
= 0 V, T
J
= 70 °C
V
DS
5 V, V
GS
= 10 V
V
GS
= 10 V, I
D
= 20 A
V
GS
= 4.5 V, I
D
= 15 A
V
DS
= 15 V, I
D
= 15 A
Min.
40
Typ.
Max.
Unit
V
44
- 5.9
1.5
3.0
± 100
1
20
50
0.0069
0.0084
75
2400
0.0088
0.0105
mV/°C
V
nA
µA
A
Ω
S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
Current
a
V
DS
= 20 V, V
GS
= 0 V, f = 1 MHz
V
DS
= 20 V, V
GS
= 10 V, I
D
= 20 A
V
DS
= 20 V, V
GS
= 4.5 V, I
D
= 20 A
f = 1 MHz
V
DD
= 20 V, R
L
= 1
Ω
I
D
20 A, V
GEN
= 4.5 V, R
g
= 1
Ω
2.5
260
100
37
16
6.5
4.5
5.5
30
15
45
15
9
8.5
45
25
70
25
15
10
60
10
40
100
0.81
22
14
11
11
1.2
35
25
56
24
pF
nC
Ω
ns
V
DD
= 20 V, R
L
= 1
Ω
I
D
20 A, V
GEN
= 10 V, R
g
= 1
Ω
5
40
5
T
C
= 25 °C
I
S
= 10 A
A
V
ns
nC
ns
I
F
= 20 A, dI/dt = 100 A/µs, T
J
= 25 °C
Notes:
a. Pulse test; pulse width
300 µs, duty cycle
2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
2/9
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