SUD40N02-08
N-Channel
20 V (D-S) 175 °C MOSFET
SPECIFICATIONS (T
J
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
V
(BR)DSS
V
GS(th)
I
GSS
I
DSS
I
D(on)
V
GS
= 0 V, I
D
= 250
mA
V
DS
= V
GS
, I
D
= 250
mA
V
DS
= 0 V, V
GS
=
"12
V
V
DS
= 20 V, V
GS
= 0 V
V
DS
= 20 V, V
GS
= 0 V, T
J
= 125_C
V
DS
= 5 V, V
GS
= 4.5 V
V
GS
= 4.5 V, I
D
= 20 A
Drain-Source On-State Resistance
Forward Transconductance
r
DS(on)
g
fs
V
GS
= 4.5 V, I
D
= 20 A, T
J
= 125_C
V
GS
= 2.5 V, I
D
= 20 A
V
DS
= 5 V, I
D
= 40 A
20
40
0.0068
0.0104
0.011
0.0085
0.013
0.014
S
W
20
0.6
"100
1
50
V
nA
mA
A
Symbol
Test Condition
Min
Typ
Max
Unit
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain
Charge
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
V
DD
= 10 V, R
L
= 0.25
W
I
D
^
40 A, V
GEN
= 4.5 V, R
G
= 2.5
W
1
20
120
45
20
V
DS
= 10 V, V
GS
= 4.5 V, I
D
= 40 A
,
,
V
GS
= 0 V, V
DS
= 20 V, f = 1 MHz
2660
730
375
26
5
7
3.7
35
190
70
35
ns
W
35
nC
pF
Gate Resistance
Turn-On Delay Time
c
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Diode Ratings and Characteristic (T
C
= 25_C)
Pulsed Current
Diode Forward Voltage
Source-Drain Reverse Recovery Time
I
SM
V
SD
t
rr
I
F
= 100 A, V
GS
= 0 V
I
F
= 40 A, di/dt = 100 A/ms
1.2
35
100
1.5
70
A
V
ns
Notes
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width
v
300
ms,
duty cycle
v
2%.
c. Independent of operating temperature.
2/5
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