SUD40N02-08
N-Channel
20 V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
V
DS
(V)
20
FEATURES
I
D
(A)
a
40
40
r
DS(on)
(W)
0.0085 @ V
GS
= 4.5 V
0.014 @ V
GS
= 2.5 V
D
TrenchFETr Power MOSFET
D
175_C Maximum Junction Temperature
D
100% R
g
Tested
TO-252
D
Drain Connected to Tab
G
D
S
G
Top View
Order Number:
SUD40N02-08
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
T
C
= 25_C
T
A
= 25_C
T
C
= 25_C
T
C
= 100_C
Symbol
V
DS
V
GS
I
D
I
DM
I
S
P
D
T
J
, T
stg
Limit
20
"12
40
40
100
40
71
8.3
- 55 to 175
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
t
v
10 sec.
Maximum
Junction-to-Ambient
b
Steady State
R
thJA
R
thJC
Symbol
Typical
15
40
1.75
Maximum
18
50
2.1
Unit
_C/W
Maximum Junction-to-Case
Notes
a. Package Limited
b. Surface Mounted on 1” x 1” FR4 Board
c. t
v
10 sec
1/5
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