SUD19N20-90
N-Channel
200 V (D-S) 175 °C MOSFET
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
3.0
V
GS
= 10
V
I
D
= 5 A
I
S
- Source Current (A)
100
2.5
R
DS(on)
- On-Resistance
(Normalized)
2.0
T
J
= 150 °C
10
1.5
1.0
T
J
= 25 °C
0.5
0.0
- 50
- 25
0
25
50
75
100
125
150
175
1
0
0.3
0.6
0.9
1.2
T
J
- Junction Temperature ( °C)
V
SD
- Source-to-Drain
Voltage
(V)
On-Resistance vs. Junction Temperature
Source-Drain Diode Forward Voltage
THERMAL RATINGS
25
100
20
I
D
- Drain Current (A)
I
D
- Drain Current (A)
10
Limited
by
R
DS(on)
*
10
µs
100
µs
15
1 ms
10
1
T
C
= 25 °C
Single Pulse
10 ms
100 ms
1 s, DC
5
0
0
25
50
75
100
125
T
C
- Case Temperature (°C)
150
175
0.1
0.1
Maximum Avalanche Drain Current
vs. Case Temperature
2
1
Duty Cycle = 0.5
Normalized Effective Transient
Thermal Impedance
10
1000
100
V
DS
- Drain-to-Source Voltage (V)
* V
GS
> minimum V
GS
at which R
DS(on)
is specified
1
Safe Operating Area
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10-
4
10-
3
10-
2
10-
1
Square Wave Pulse Duration (s)
1
10
30
Normalized Thermal Transient Impedance, Junction-to-Case
4/7
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SHENZHENFREESCALE [ ShenZhen FreesCale Electronics. Co., Ltd ]
